The laser (LASER), originating from the principle of stimulated emission proposed by Albert Einstein, has been a catalyst for substantial advancements across numerous industrial and scientific domains. Initially confined to research and laboratory applications, the scope of laser technology has expanded rapidly over time. This expansion is primarily due to the laser's unique characteristics, such as high-density energy output and precise beam control, which have facilitated its widespread integration into contemporary industrial practices. Specifically, laser materials processing technology enables the machining of diverse materials, including metals, ceramics, and polymers, in a non-contact manner, thereby achieving high precision without the risk of wear or contamination. As a result, laser processing has become indispensable in fields such as advanced electronics manufacturing, medical device production, aerospace, and the automotive industry. Furthermore, laser materials processing exhibits significant potential for high-precision applications that demand minimal thermal deformation of materials, such as microfabrication and the production of complex geometries. This paper provides a comprehensive examination of the development and necessity of laser processing technology, explores various laser types and their possible applications, and elucidates why laser technology has emerged as a fundamental component of modern manufacturing, alongside its trajectory for future development.

This review addresses the development trends of dielectric ceramics, the key material for Multilayer Ceramic Capacitors (MLCCs), which are essential components in high-performance electronic devices. Traditional MLCCs have employed BaTiO₃ (BT)-based dielectrics to achieve high dielectric constant and low resistance. By minimizing oxygen vacancies and suppressing grain growth in BT materials, the temperature and voltage stability of MLCCs have been improved, leading to the development of MLCCs with diverse properties. However, the maximum dielectric constant of approximately 3000 in BT materials poses a limitation in overcoming the trade-off between rated voltage and capacitance density. Therefore, ultra-high permittivity dielectric materials have gained attention to meet the requirements of ultra-high-performance MLCCs, and ongoing research focuses on enhancing the temperature and frequency stability of these materials. This review analyzes the characteristics and limitations of conventional BT materials and explores recent research trends and future potential in developing new MLCCs based on ultra-high dielectric constant materials.

Piezoelectric thin films have become increasingly significant in applications such as MEMS devices, wearable electronics, and lab-on-a-chip systems due to the miniaturization and integration of electronic devices. For piezoelectric thin films, even when an electric signal is applied in the thickness direction, greater deformation can often be observed in the in-plane direction, which is perpendicular to the electric field. Therefore, piezoelectric thin film devices are frequently designed using the transverse mode. As a result, it is crucial to evaluate piezoelectric thin films by measuring their transverse piezoelectric coefficient. This tutorial paper introduces a method for evaluating the effective transverse piezoelectric coefficient (e_31,f) of piezoelectric thin films using laser Doppler vibrometry (LDV). Additionally, the paper outlines a step-by-step procedure for measuring e31,f while using Bi_1/2Na_1/2TiO₃-based piezoelectric thin films as an example. This tutorial is expected to provide a practical and valuable method for measuring and analyzing the transverse piezoelectric properties, thereby supporting the development of new piezoelectric thin film materials.

Perovskite, which follows the chemical formula ABX3 and exhibits an octahedral structure, is primarily a hybrid of organic and inorganic materials. It can be broadly categorized into three types based on dimensionality: 0D nanocrystals, quasi- 2D, and 3D bulk structures. As a result, it is gaining attention as a next-generation optoelectronic material for applications in light-emitting devices, solar cells, and sensors. This paper provides insights into dimension of perovskites, their respective synthesis methods, and current research trends, thereby offering prospects for advancements in the study of next-generation optoelectronic materials.

This study examined the crystallinity and potential of BaTiO₃ powder, prepared by hydrothermal synthesis at 60 nm, as a dielectric material for automotive MLCCs under varying heat treatment temperatures. At temperatures above 850℃, the powder exhibited an orthorhombic structure, with crystallinity and particle size increasing as the temperature rose. In the range of 850~900℃, the powder displayed a uniform particle size distribution and minimal agglomeration, with particles ranging between 150~200 nm. Additionally, it was confirmed that the heat treatment temperature significantly impacts the properties of BaTiO₃ powder, which are critical for the dielectric performance required in X7R MLCCs used in automotive applications. Specifically, high-temperature treatment (above 850℃) was essential for enhancing the powder's crystallinity and forming a stable core-shell structure, which is crucial for achieving stable TCC (Temperature Coefficient of Capacitance) characteristics. It was confirmed that increased crystallinity at temperatures above 850℃ facilitated the development of the core-shell structure through interactions with additives, thereby achieving the necessary characteristics required for highly reliable automotive MLCCs.

With the recent active development of laser-based weapons/monitoring/communication systems, there is a significant increase in the demand for improved performance of piezoelectric actuators, a key component of both deformable mirror (DM) and fast steering mirror (FSM) in the systems. The conventional polycrystalline piezoelectric ceramic actuators have limitations in improving their characteristics, so the ultrahigh strain PMN-PZT piezoelectric single crystal multilayer actuators have been developed. In this study, the basic experimental methods were developed to evaluate their stability as well as reliability. The limitations of deformation and applied voltage were confirmed through the breakdown voltage test, and the degree of stability was confirmed through the hammering test. In this study, the breakdown voltage test and the hammering test were confirmed to be effective methods to evaluate their stability as well as reliability. Through these studies, the next-generation PMN-PZT piezoelectric single-crystal multilayer actuator is expected to be applied to various piezoelectric application fields by securing reliability as well as excellent piezoelectric properties.

Piezoelectric materials, which convert mechanical energy into electrical signals, are widely used in various industrial applications such as sensors, actuators, and energy harvesting devices. This study aims to enhance the performance of Pb(Mg_1/3Nb_2/3)O₃-Pb(Al_1/2Nb_1/2)O₃-Pb(Zr_0.52Ti_0.48)O₃ (PMN-PAN-PZT) piezoelectric ceramics by investigating the effects of varying PAN and PMN content and adding Nb₂O₅ on their piezoelectric properties. The results show that with 2 mol% of PMN and PAN, the morphotropic phase boundary (MPB) region exhibits the highest piezoelectric properties. Additionally, excess Nb₂O₅ positively influenced the piezoelectric properties, maximizing electro-mechanical coupling factor (k_p=63%, d₃₃=440 pC/N). These findings contribute to developing next-generation high-performance piezoelectric materials, with potential for improved efficiency and performance in various industries.

This paper presented an analytical SS model to determine the subthreshold swing (SS) of an elliptic junctionless Gate- All-Around (GAA) FET using ferroelectric. Analyzing a GAA FET with an elliptic cross-section was essential because it is difficult to manufacture a perfectly circular GAA FET. The results of the proposed SS model agreed well with 2D numerical simulation. Using this analytical SS model, SS was analyzed for the eccentricity and the ratio (P_r/E_c) of permanent polarization P_r and coercive electric field E_c in an elliptic junctionless GAA FET with an MFMIS (Metal-Ferroelectric-Metal-Isulator- Semiconductor) structure using ferroelectric. As a result, the changing rate of the average surface potential due to the gate voltage increased and SS decreased as the eccentricity increased. It was found that the inner gate voltage amplified more than the outer gate voltage due to the ferroelectricity, better controlling the carriers in the channel, thereby reducing SS. As the P_r/E_c decreased, the changing rate of the ferroelectric charge for the outer gate voltage increased and SS decreased. As the eccentricity increased, the changing rate of SS for P_r/E_c decreased. There was no significant change in SS until the eccentricity was about 0.5. The SS began to decline above 0.5 due to the changes in ferroelectric charge, inner gate voltage, and average surface potential for the outer gate voltage.

Post-metallization annealing (PMA) has been employed in silicon-based CMOS fabrication to enhance MOSFET reliability and performance. However, although deuterium annealing can reduce interface traps between the Si and SiO₂ gate dielectric, it remains insufficient to fully passivate these traps. In this context, a multiple PMA process, including additional hydrogen annealing, is proposed to further reduce dangling bonds. Silicon-based MOSFETs are fabricated to verify the proposed annealing process architecture. Electrical characterization of the threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and carrier mobility (μ_n) is conducted to investigate the impact of the multiple PMA. This study provides a guideline for PMA in MOSFET fabrication, with improvements in both performance and reliability.

In this study, copper oxide thin films were fabricated by facing target sputtering system and their structural, optical, and electrical properties were investigated. Crystal phase of samples were changed by variation of oxygen flow rate from Cu to Cu₂O and CuO. Compared to Cu metal film, electrical properties of Cu₂O and CuO were relatively degraded, however, asfabricated Cu₂O and CuO indicated still low resistivity (~10^-3 Ω·cm) and high carrier concentration (~10¹⁹ cm^-3). From the results, it is thought that the copper oxide thin films Cu₂O fabricated under optimal conditions can be applied to various optoelectronic devices including ultraviolet photodetector.

This paper presents a Si-NWFET-based LC-VCO design that includes an SCA, a P-type Si-NWFET varactor, a 1.2 nH LC tank, and a bias network to linearize the varactor’s C-V characteristics, enabling a wide oscillation frequency tuning range. The circuit achieves a 24 GHz oscillation frequency with a low power consumption of 16.8 μW at a control voltage (V_ctrl) of 0.7 V. Phase noise simulations indicate an excellent -109.62 dBc/Hz at a 1 MHz offset, confirming its applicability for RFIC systems. Additionally, the proposed LC-VCO demonstrates stable performance in five major corner process analyses, ensuring robustness under extreme conditions. These results validate the durability of the design and highlight the potential of Si-NWFETbased LC-VCOs as a viable, low-power, highly integrated solution for RFIC applications. The findings underscore the suitability of Si-NWFET technology as a promising alternative to current FinFET and CMOS processes in advanced circuit design.

In this study, we proposed β-Ga₂O₃ JFET using nitrogen doping and analyzed the electrical characteristics. In β-Ga₂O₃, nitrogen ions act as a deep acceptor and are used to implement the current blocking layer. By using this characteristic of the nitrogen ion, in the proposed JFET, nitrogen ions are used to obtain gate control and pinch off the channel of the JFET. The numerical TCAD simulation was performed to design and analyze the proposed JFET. The simulated forward and reverse characteristics of the proposed JFET were obtained as a function of JFET width and nitrogen doping concentration. The maximum breakdown voltage of 1.7 kV was obtained with the on-resistance of 16.7 mΩ·cm² when the channel width was 1.5 μm and nitrogen doping concentration is 1×1018/cm³, respectively.

We propose a real-time information propagation arithmetic neural network (PANN) that minimizes the loss of power generation output of the system in the event of sudden changes in the module due to strong external typhoons or earthquakes at the solar power generation facility site. In addition, we propose a new double-sided module reflector that can reduce the local loss of power generation efficiency of the single-sided module reflector that is currently widely distributed, as well as the environmental pollution and inconvenience of maintenance work of the existing double-sided module. We present a computational network that can detect the faulty solar panel in real-time by checking the fault status of the installed solar panel and using a real-time computation method through a node-to-node diffusion method. In particular, this method recognizes the power loss part due to sudden changes in the module in real time and can take emergency measures for various nonlinear field facilities through a neural structure that finds the optimal distance up, down, left, and right. To confirm the characteristics of the loss reduction control of the field facility, we confirmed that the system was configured as a 7-degree-of-freedom control model using the PANN neural network learning structure method and improved the power generation output. PANN (Propagation Arithmetic Neural Networks) and various module systems are proposed for the real-time recovery of faulty solar panels and improving module system efficiency.

This study explores the realization of high-efficiency white LED lighting by applying cyan-emitting quantum dot (CQD) and red-emitting quantum dot (R-QD) deposition without any host matrix onto a yellow-emitting phosphor-in-glass (YPIG) substrate using an aerosol-assisted deposition (AAD) process. The AAD process facilitates the direct formation of densely packed QD-deposited layers on the substrate, effectively addressing challenges such as optical efficiency loss and degradation typically associated with organic host matrices. C-QD and R-QD coatings, deposited with thicknesses of 0.84 μm and 0.77 μm on the upper and lower Y-PIG substrate, exhibited robust color conversion properties. These films achieved a luminous efficacy of 77 lm/W and a high color rendering index (CRI) of 96.8 under blue light excitation. The dual-layer structure produced highquality light closely resembling natural daylight, as confirmed through real image. Consequently, the research suggests the potential of AAD-based QD deposition to achieve superior performance without relying on host matrices, offering a viable solution for high-efficiency lighting applications. Further optimization of deposition parameters and exploration of diverse substrates and QD material combinations are expected to expand the applicability of this technique in future research.

The printed and bifacial organic photovoltaics (OPVs) using a semi-transparent electrode structure to enhance light management were investigated. To optimize energy-band alignment for bifacial device structure, a cathode interlayer of ZnO nanoparticles with a low work function of 3.9 eV combined with a polyethyleneimine (PEI) layer was employed. Photon distribution simulations revealed the influence of structural parameters on device conductivity, light absorption, and surface morphology. The dispensing strength, adjusted via applied voltage during printing, significantly impacted device performance. At 13 V and 17 V, J-V characteristics were consistent; however, at 20 V, line width increased by approximately 100%, resulting in a 50% reduction in PCE. These findings highlight the critical relationship between spraying strength, line width, and efficiency, offering valuable insights for advancing printed OPV technologies.