Quantum dots (QDs) are semiconductor nanocrystals with sizes on the order of several nanometers, whose bandgaps can be tuned by controlling the particle size. Owing to this bandgap tunability, QDs can absorb near-infrared (NIR) and short-wave infrared (SWIR) light, spectral regions that are difficult to access with conventional silicon-based devices. However, colloidal QDbased infrared photodetectors still suffer from intrinsically high dark current, trap-induced noise, and limited response speed. As a result, they exhibit fundamental performance gaps in terms of detectivity and speed–bandwidth product compared to epitaxial infrared detectors, highlighting the need for structural and architectural design strategies to overcome these limitations. In this review, we discuss recent advances in enhancing the spectral selectivity and sensitivity of infrared photodetectors through three-dimensional optical architectures, including metasurfaces and metamaterials. We focus in particular on design strategies and the underlying mechanisms responsible for performance enhancement, and we outline how structural approaches can be leveraged to effectively control the sensitivity and wavelength selectivity of QD-based infrared detectors.
Cellulose nanofiber (CNF) has attracted significant attention as a next-generation insulating material due to its ecofriendly nature and outstanding functionalities. However, conventional kraft insulation paper suffers from limited dielectric breakdown strength and long-term reliability under high-voltage conditions, highlighting the need for alternative materials. In this study, kraft pulp was combined with five types of CNFs (A, B, C: wood-based / D, E: non-wood-based) to fabricate composite insulation papers, and their electrical and mechanical properties were systematically evaluated. The results showed that CNF incorporation generally enhanced density and tensile strength, while certain types contributed to lowering dielectric constant and improving breakdown strength. Among the wood-based CNFs, type C exhibited the most balanced performance in terms of dielectric stability and mechanical reinforcement. Among the non-wood-based CNFs, type E demonstrated notable improvements in structural compactness and tensile strength, suggesting favorable reliability. Therefore, this study identifies CNF C among wood-based types and CNF E among non-wood-based types as the most promising candidates for insulation performance enhancement, suggesting their applicability as next-generation insulating materials for power equipment and ecofriendly electronic devices.
Tandem or multijunction solar cells (MJSCs) can convert sunlight into electricity with higher efficiency (η) than single junction solar cells (SJSCs) by dividing the solar irradiance over sub-cells having distinct bandgaps. The efficiencies of various common SJSC materials are close to the edge of their theoretical efficiency and hence there is a tremendous growing interest in utilizing the tandem/multijunction technique. Recently, III-V materials integration on a silicon substrate has been broadly investigated in the development of III-V on Si tandem solar cells. Numerous growth techniques such as heteroepitaxial growth, wafer bonding, and mechanical stacking are crucial for better understanding of high-quality III-V epitaxial layers on Si. As the choice of growth method and substrate selection can significantly impact the quality and performance of the resulting tandem cell and the terminal configuration exhibit a vital role in the overall proficiency. Parallel and Series-connected configurations have been studied, each with its advantage and disadvantages depending on the application and cell configuration. The optimization of both growth mechanisms and terminal configurations is necessary to further improve efficiency and lessen the cost of III-V on Si tandem solar cells. In this review article, we present an overview of the growth mechanisms and terminal configurations with the areas of research that are crucial for the commercialization of III-V on Si tandem solar cells.
In this paper, we compared and analyzed the power load patterns of dormitory buildings and office buildings to use them as basic data (demand analysis and capacity design) for the design and operation of microgrids for multi-use facilities, and the following conclusions were got. During the daytime on regular weekdays, the power consumption load pattern of office buildings was relatively large at 264.0~332.3 kWh, and during the evening hours, the power consumption load pattern of dormitory buildings was relatively large at 233.0~258.3 kWh. In the case of vacation, during the daytime on weekdays, the power consumption load pattern of office buildings was relatively large at 279.1~407.4 kWh, and in the evening, the power consumption load pattern of dormitory buildings was relatively high at 280.1~394.1 kWh. During the daytime on regular weekends, the power consumption of dormitory-type buildings was relatively high at 133.5~201.6 kWh, and it was found that the power consumption of dormitory-type buildings appeared relatively high at 187.5~252.1 kWh. During a vacation in the daytime on weekends, the power consumption of dormitory-type buildings was found to be 186.5 kWh~ and 218.6 kWh. The increase in power consumption during a vacation (December-February) compared to normal (April-June) was thought to be due to an increase in electricity demand, and the reason for the higher power consumption in dormitory buildings during the vacation was due to reduced working hours in office buildings.
Semiconductor devices have evolved from 2D planar FETs to 3D bulk FinFETs, with aggressive device scaling. Bulk FinFETs make it possible to suppress short-channel effects. In addition, the use of low-k dielectric materials as a vacuum gate spacer have been suggested to improve the AC characteristics of the bulk FinFET. However, although the vacuum gate spacer is effective, correlation between the vacuum gate spacer and the short-channel-effects have not yet been compared or discussed. Using a 3D TCAD simulator, this paper demonstrates how to optimize bulk FinFETs including a vacuum gate spacer and to suppress short-channel effects.
The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.
The performance of devices has been improved with fine processes from planar to three-dimensional transistors (e.g., FinFET, NWFET, and MBCFET). There are some problems such as a short channel effect or a self-heating effect occur due to the reduction of the gate-channel length by miniaturization. To solve these problems, we compare and analyze the electrical and thermal characteristics of FinFET and GAAFET devices that are currently used and expected to be further developed in the future. In addition, the optimal structure according to the Fin shape was investigated. GAAFET is a suitable device for use in a smaller scale process than the currently used, because it shows superior electrical and thermal resistance characteristics compared to FinFET. Since there are pros and cons in process difficulty and device characteristics depending on the channel formation structure of GAAFET, we expect a mass-production of fine processes over 5 nm through structural optimization is feasible.
In this study, we fabricated multilayer graphene on a glass substrate by stacking the monolayer graphene synthesized via chemical vapor deposition. The electrical sheet resistance and optical transmittance were evaluated to confirm the quality of the stacked multilayer graphene. Using the fabricated multilayer graphene/glass structure, we characterized its thermal radiative property in terms of the integrated emissivity. The integrated emissivity of the multilayer graphene/glass structure was tuned from 0.91 to 0.72 when the number of graphene layers was changed from 1 to 12. We also demonstrated that the emissivity tunability provided a way to control the apparent temperature of an object that can be used in infrared stealth applications.
In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is VG=VD, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.
Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO2 and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.
To overcome the limitations of the conventional Ni anode-supported SOFCs, various types of ceramic anodes have been studied. However, these ceramic anodes are difficult to commercialize because of their low cell performances and difficulty in manufacturing anode-support typed SOFCs. Therefore, in this study, to use these ceramic anodes and take advantage of anode-supported SOFC, which can minimize ohmic loss from the thin electrolyte, we fabricated cathode support-typed SOFC. The cathode-support of LSCF-YSZ was prepared by the acid treatment of conventional Ni-YSZ (Yttria-stabilized Zirconia) anode-support, followed by the infiltration of LSCF to YSZ scaffold. The composite of La(Sr)Ti(Ni)O3 and Ce(Mn, Fe)O2 was used as the ceramic anode. The fabricated cathode-supported button cell showed a relatively low power density of 0.207 Wcm-2 at 850℃; however, it is expected to show better performance through the optimization of the infiltration rate and thickness of LSCF-YSZ cathode-support layer.
In this study, we prepared 40, 45, 50, 55, 60, 65, and 70 wt% content composites filled in epoxy matrix for two micro silica and three micro alumina types for use as a GIS heavy electric machine. As a filler type of epoxy composite, micro silica composites showed excellent AC breakdown strength properties compared to micro alumina composites in the case of electrical properties of micro silica and alumina. The electrical breakdown properties of micro silica composites increased with increasing filler content, whereas those of micro alumina decreased with increasing filler content. In the case of mechanical properties, the micro silica composite showed improved tensile strength and flexural strength compared with the micro alumina composite. In addition, mechanical properties such as tensile strength and flexural strength of micro silica and alumina composites decreased with increasing filler content. This is probably because O-H groups are present on the surface of silica in the case of micro silica but are not present on the surface of alumina in the case of micro alumina.
We investigated the structure of an ultra-thin insulating board with low thermal conductivity along z-axis, which was based on the idea of void layers created during the glass infiltration process for the zero-shrinkage low-temperature co-fired ceramic (LTCC) technology. An alumina and four glass powders were chosen and prepared as green sheets by the tape casting method. After comparison of the four glass powders, bismuth glass was selected for the experiment. Since there is no notable reactivity between alumina and bismuth glass, alumina was selected as the supporting additive in glass layers. With 2.5 vol% of alumina powder, glass green sheets were prepared and stacked alternately with alumina green sheet to form the ‘alumina/glass (including alumina additive)/alumina’ structure. The stacked green sheets were sintered into an insulating substrate. Scanning electron microscopy revealed that the additive alumina formed supporting bridges in void layers. The depth and number of the stacking layers were varied to examine the insulating property. The lowest thermal conductivity obtained was 0.23 W/mK with a 500-㎛-thick substrate.
This study used the heat conductive silicone rubber sample of 0.95 mm thickness to research the properties of current by changing voltage. When the 1, 10, 30, 60, and 90 minute have passed, the running current has been measured through the applied voltage range of 200 V～800 V on setting temperature of 110℃～170℃. As the temperature increased in applied voltage of 800 V, so did the current value according to time in proportion to the increasing temperature. In an analysis of FT-IR (fouriertransform infrared) spectrum, the hydroxyl radicals group(O-H) was created by effects of the hydrogen that methyl group is eliminated by addition of the cross-linking agent peroxide.
Aspheric lenses used in the thermal imaging are typically fabricated using expensive single-crystal materials (Ge and ZnS, etc.) by the costly single point diamond turning (SPDT) process. As a potential solution to reduce cost, compression molding method using chalcogenide glass has been attracted to fabricate IR optic. Thermal deformation of a molded lens should be compensated to fabricate chalcogenide aspheric lens with form accuracy of the submicron-order. The thermal deformation phenomenon of molded lens was analyzed ant then compensation using mold iteration process is followed to fabricate the high accuracy optic. Consequently, it is obvious that compensation of thermal deformation is critical and useful enough to be adopted to fabricate the lens by molding method.
In this paper, we have researched semiconductor optical filters to solve the problem of the high failure rate that are recognize bad of financial account, jam of financial account and the ATM service interruption due to failure of accurate location information among the operation of the ATM (automatic teller machine) systems. A semiconductor optical filters that have high resolution and less diffuse, high transmittance are able to detect the information of financial account surface accurately. Therefore, it is a stable filter that is able to minimize the incidence of disability. In this paper, we drew the determinants by element for implement an excellent semiconductor optical filters. Based on this, we had to be able to implement the semiconductor optical filter that is able to be mounted on the actual ATM system through future studies.
With the recent development of less-costly uncooled detector technology, expensive optics are among the remaining significant cost drivers in the thermography camera. As a potential solution to this problem, the fabrication of IR lenses using chalcogenide glass has been studied in recent years. We report on the molding and evaluation of a ultra-precision chalcogenide-glass lens for the thermography camera for body-temperature monitoring. In addition, we fabricated prototype thermography camera using the chalcogenide-glass lens and obtained the thermal image from the camera. In this work, it was found out that thermography camera discerned body-temperature between 20 and 50℃ through the analysis of thermal image. It is confirmed that thermography camera using the chalcogenide-glass lens is applicable to the body-temperature monitoring system.
ZnO crystals with octahedral shape were synthesized by thermal evaporation technique. ZnF2 powder was used as the source material. The thermal evaporation and oxidation of ZnF2 powder was carried out for 1 hr at 1,000℃ in air under atmospheric pressure. SEM images showed that the ZnO crystals produced by oxidizing ZnF2 vapor possessed a characteristic octahedral shape. XRD spectrum revealed that the ZnO octahedron had hexagonal wurtzite structure. In the room temperature photoluminescence spectrum, a strong green emission peak at around 510 nm was observed.
Carbon-nanotube field-effect transistors (CNFETs) have drawn wide attention as one of the potential substitutes for metal-oxide-semiconductor field-effect transistors (MOSFETs) in the sub-10-nm era. Output characteristics of coaxially gated CNFETs were simulated using FETToy simulator to reveal the dependence of drain current on the nanotube diameter and gate oxide thickness. Nanotube diameter and gate oxide thickness employed in the simulation were 1.5, 3, and 6 nm. Simulation results show that drain current becomes large as the diameter of nanotube increases or insulator thickness decreases, and nanotube diameter affects the drain current more than the insulator thickness. An equation relating drain saturation current with nanotube diameter and insulator thickness is also proposed.
Encapsulant curing in terms of convection oven leads to thermal induced stress due to nonuniform thermal conductivity in LED package. We have adopted infrared (IR) light for silicone curing in order to release the stress. The light uniformity irradiated on an encapsulant surface is confirmed to be uniform by optical simulation. Shear strength of die paste using IR compared to convection oven is increased 19.2% at the same curing time, which indicates curing time can be shortened. The indentation depth difference between center and edge of silicone encapsulant in terms of convection oven and IR are 14.8% and 3.4%, respectively. Curing by IR also shows 2.3% better radiant flux persistency rate of LED at 85℃ after 1,000 h reliability test compared to convection curing.
Diagnostic tests were performed on two high voltage (HV) motor stator windings. These tests included the measurement of insulation resistance, polarization index, AC current, dissipation factor (tanδ) and partial discharge (PD) magnitude. Surface contamination of HV motor stator windings has an effect on the AC current and tanδ. When the stator windings were finished cleaning and insulation reinforcement, the increase rate of AC current (ΔI) and dissipation factor (Δtanδ) were very small compared to those before cleaning. However, the PD magnitude remained the same. These tests show that cleaning and insulation reinforcement of HV motor stator windings can reduce the insulation failure.
To evaluate whether or not their product is in conformity with its drawing, today`s factories manufacturing rubber and/or plastic products use manual process. In manual conformity inspection process, a person decides conformity as comparing drawing to image of product with his eyes. The manual process is tedious and time-consuming in addition that it is impossible to automatically record various informations related to inspection. To solve such problems, this paper proposes automatic drawing conformity inspection system based on computer vision technologies such as image feature matching and bilinear interpolation. The test results show that proposed system is a lot faster when comparing with manual system.
In this study, we synthesized the chalcogenide glass(Ge19Sb23Se58) for infrared optics by melt-quenching method and verified the effect of cooling condition on the glass properties. The structural and optical properties of the glass were analyzed by XRD, FT-IR and SEM image. The glass synthesized under the cooling temperature of 980℃ shows transmittance of 58% at 8∼12 ㎛, which was decreased as the cooling temperature was decreased. In addition, thermal and hardness also were measured. From the analysis results, we ascertained the feasibility as a molding materials for infrared optics.
A uncooled infrared ray sensor used in an infrared thermal imaging detector has many advantages. But because the uncooled infrared ray sensor is made by MEMS (micro-electro-mechanical system) process variation of offset is large. In this paper, to solve process variation of offset a ROIC for uncooled infrared ray sensor that has process variation of offset compensation technique using differential delta sampling and reference signal compensation circuit was proposed. As a result of simulation that uses the proposed ROIC, it was possible to acquire compensated output characteristics without process variation of offsets.
In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a SiO2/Si substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.
Nd and Ti co-doped bismuth ferrite (Bi1-xNdx)(Fe1-yTiy)O3 (x, y=0, 0.05, 0.1, 0.2) ceramics and thin films were synthesized through the conventional mixed-oxide process and pulsed laser deposition (PLD), respectively. Nd and Ti co-doping effect was examined with emphasis on how these impurities affect phase formation behavior as there could be the improvement in leakage current problems often associated with multiferroic BiFeO3 (BFO) thin films. The lattice constants of BFO ceramics decreased with Nd doping concentration up to 10mol%, while they further decreased with Nd and Ti co-doping to about 20%. BFO thin films obtained by the PLD process revealed random polycrystalline structure. Similar to bulk BFO ceramic, Nd and Ti co-doping effectively suppressed the formation of unwanted secondary phase and thus stabilized the perovskite phase in BFO thin films.
We have proposed a new configuration on the cathode structure to improve a neutron yield without the application of external ion sources in an inertial electrostatic confinement (IEC) device. A neutron yield in the IEC device is closely related to the potential well structure generated inside the cathode and is proportional to the ion current. Therefore, the application of a double grid cathode structure to the IEC device is expected to produce a higher ion current and neutron yield than at a single grid cathode due to a high electric field strength generated around the cathode. These possibilities were verified as compared with the ion current calculated from both shape of the single and double grid cathode. Additionally from the results of ion`s lives and trajectories examined at various outer cathode voltages and grid cathode configurations by using particle simulations, the validity of the double grid cathode was confirmed.
Forest fire can cause a serious damage to overhead conductors. Therefore, detailed investigation on the changes of mechanical and electrical properties of damaged conductors should be carried out to understand the effect of forest fires on conductors. This is of critical importance in maintaining transmission line safely. This paper examines the changes of mechanical and electrical properties of flame exposed conductor. Tensile strength (TS) decreased according to increase of forest fire temperature and conductivity changed according to forest fire temperature. Specimens were aluminum conductors of aluminium conductor steel reinforced (ACSR) 410, 240, 480 ㎟. In this paper, the electrical and mechanical characteristics of forest fires exposed overhead conductors depending on the diameter of aluminum conductors are presented. It was possible to estimate the degree of deterioration caused by forest fires. The detailed results are given in the paper.
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