The rapid proliferation of artificial intelligence (AI) servers and high-performance computing systems has significantly elevated the technical and reliability requirements for multilayer ceramic capacitors (MLCCs). In such systems, MLCCs are critical passive components that must deliver high capacitance, fast transient response, and robust insulation performance under high temperature, voltage, and current density. This review examines the material, structural, and process innovations that underpin MLCC performance in AI applications. Key topics include the development of ultrathin dielectric layers (<0.5 μm), rare-earth doped BaTiO₃-based dielectrics with enhanced DC bias stability, and core-shell microstructures designed for temperature and field resilience. The paper also explores insulation degradation mechanisms―such as vacancydriven conduction and demixing―and advanced reliability assessment methodologies, including HALT, TSDC, and the tipping point framework. Comparisons with automotive-grade MLCCs highlight the unique requirements of AI systems, such as ultraminiaturization, high volumetric efficiency, and ppm-level field failure rates. Finally, the review discusses emerging trends in MLCC technology, including particle engineering, interface stabilization, and advanced lamination techniques, and provides insight into the future direction of capacitor development tailored to AI data center environments.

This study developed a dielectric composition for high-capacitance MLCCs with C0G and U2J temperature compensation characteristics (Class I) under reducing conditions. The potential application of this composition in highpermittivity class I MLCCs was examined. Using (Ba₀.₂₄Ca₀.₁₆Sr₀.₆)(TiₓZr₁₋ₓ)O₃. XRD analysis showed that secondary phases like Sr₂TiO₄ and TiO₂ formed at higher Ti content, affecting the stoichiometric balance. Adjusting the Ti/Zr molar ratio resulted in a dielectric constant of 41.2 ~ 105, a dielectric loss of 0.082 ~ 0.174%, and insulation resistance above 1.6 × 10¹³ ohms at 25℃. The TCC shifted from C0G to U2J as the Ti/Zr ratio increased, but the composition enabled the design of high-capacitance and high-voltage MLCCs with favorable dielectric and electrical properties.

In this study, the electrical properties of a C0G (class 1 ceramic) dielectric composition with internal reducibility, specifically (Ba_0.27CaSr)(Zr_0.95Ti_0.05)O₃, were investigated by fixing Ba at the A site and varying the Ca/Sr molar ratio. The potential application of this composition in high-permittivity C0G MLCCs was examined. The powder was calcined at 1,150℃ for 2 hours, as determined by TG-DTA analysis, and the resulting powder was ground to achieve a particle size (D50) of 0.35 to 0.4 μm and a specific surface area (BET) of 4.5 to 5.0 g/m². With a Ca/Sr molar ratio of 0.3, the composition (Ba0.27Ca0.17Sr0.56) (Zr0.95Ti0.05)O₃ exhibited electrical properties with a permittivity of 41.9, a loss of less than 0.008%, and an insulation resistance exceeding 2.2×10¹³ Ω. The feasibility of using this composition for high-capacitance C0G MLCCs was confirmed.

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower RDS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys’ process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

When the clamp meter approaches the electric path where current is flowing, leakage current can be measured at a distance from the electric current because the induced current increases as the magnitude of the current increases and approaches nearer to the electric path. Therefore, measurements were carried out from a distance to avoid this effect. In addition, the measured values differ depending on the location of the power line that penetrates the ZCT of the clamp meter, thus measurements were performed at a location where this effect was minimized. The fraction of compliant branch circuits, whose leakage current was lower than 1.00 mA, was found to be 69.0% out of the total of 439 branch circuits, while the percentage of compliant branch circuits having an insulation resistance higher than 0.20 MΩ was found to be 93.2%. The reason why the percentage of compliant branch circuits with low leakage current was low might be due to the inclusion of capacitive leakage current in the total measured leakage current.

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of 3 ㎛.

Single-chamber solid oxide fuel cells (SC-SOFCs) consist of only one gas chamber, in which both the anode and the cathode are exposed to the same fuel-oxidant mixture. Thus, this configuration shows good thermal and mechanical resistance and allows rapid start-up and -down. In this study, the unit cell consisting of La_0.8Sr_0.2MnO₃ (cathode) / Zr_0.84Y_0.16O_2-x (electrolyte) / Ni-Zr_0.84Y _0.16O_2-x (anode) was fabricated and its electrochemical property was investigated as a function of temperature and the volume ratio of fuel and oxidant for SC-SOFCs. Impedance spectra were also investigated in order to figure out the electrical characteristics of the cell. As a result, the cell performance was governed by the polarization resistances of the electrodes. The cell exhibited an acceptable cell-performance of 86 mW/cm2 at 800℃ and stable performance for 3 hs under 0.7 V.

The cable degradation process is largely divided into three steps; Step 1 : Thermal degradation, Step 2 : Weibull degradation, Step 3 : Partial discharge. it is progress in step order. This article aims to explain the process of cable degradation using the method of insulation resistance and accordingly to compose and manufacture a system of measuring the life of electrical cable. Before measuring the insulation resistance, a system of measuring the temperature and current of cables was made, and the established system was installed for test on the site of a power plant to collect the measured data. The current sensor was used TFC30P80A-CL420, and temperature sensor was used theDK-1270 PT100 sensor as RTD sensor. When measured the temperature and the load current at the same position, was confirmed that in case of the load current value was high, also temperature valuehigh. Therefore, the correlation between load currents and temperature was verified, and the analysis of diagnostic data was evaluated, which could be utilized in identifying the fault condition of cable systems.

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed 6,580 um ×5,680 um of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and 0.4 mΩcm2ultra low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.