Dye-sensitized solar cells (DSSCs) suffer from efficiency limitations due to interfacial charge recombination at the TiO₂/dye/electrolyte interface. In this study, aminopropyltrimethoxysilane (APS) was introduced onto nanoporous TiO₂ photoelectrodes via a dip-coating process with controlled coating times to investigate the effect of silanization time on interfacial charge transport behavior. Unlike concentration-driven structural modification, this work focuses on the evolution of the APS-modified interface governed by reaction time. The DSSC with 30 min APS treatment exhibited the highest power conversion efficiency of 5.34%, representing a 19% enhancement compared to the untreated device (4.49%), mainly due to increased short-circuit current density and open-circuit voltage. However, prolonged coating times (2 h and 24 h) resulted in a significant decrease in photocurrent density, leading to reduced device performance despite partial improvement in recombination resistance. These results are attributed to the time-dependent evolution of the APS interfacial layer. At moderate coating time, APS provides effective surface functionalization, enhancing dye adsorption and suppressing interfacial recombination. In contrast, prolonged coating is expected to induce increased surface coverage and silane condensation, which can hinder electron injection and increase charge transport resistance. Therefore, the photovoltaic performance is governed by a trade-off between recombination suppression and charge injection efficiency, controlled by the silanization time. This study highlights the critical role of interfacial reaction kinetics in determining charge transport behavior and provides an effective strategy for optimizing DSSC performance through time-dependent interface engineering.

The development of a large-area solution process for CuO nanowires, which are promising p-type thin film transistors (TFT) channel materials, is required. To overcome the limitations of the existing high-vacuum and high-cost deposition process, a large-area Cu nanowire network was formed on the substrate using the Mayer rod coating method, and a CuO channel was implemented by subsequent thermal annealing. Consequently, p-type TFT with an on/off current ratio of 1.4×10⁴ and a field-effect mobility µ_FE≈10^-4 cm²/(V⋅s). was fabricated and optimized. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses showed that the sample annealed at 200°C exhibited an incomplete oxidation state with a mixed Cu/Cu₂O phase and a high fraction of M-OH species (58.78%), resulting in a low on/off current ratio (≈1.2). In contrast, annealing at 450°C leads to a CuOdominant phase, where the fraction of lattice oxygen(O1) increases to 31.11% and the oxygen vacancy (VO) component increases to 7.15%, indicating a significant improvement in hole concentration and charge transport. These phase transitions and surface chemical changes are identified as the key mechanisms for the enhanced TFT switching characteristics. The low-cost, large-area Mayer rodbased solution process proposed in this study provides a basic process platform for p-type TFTs applicable to flexible wearables and display technologies and suggests the possibility of commercialization through additional optimization of bias stability in the future.

Neuromorphic computing, which mimics the energy-efficient parallel processing capabilities of the human brain, has emerged as an alternative to traditional von Neumann architectures that struggle with high power consumption in the era of artificial intelligence (AI). Despite the potential of Si-based neuromorphic chips, they often face fundamental limitations in integration density and biological compatibility, necessitating the development of next-generation devices that can better emulate the ionic signaling of biological systems. This review provides a comprehensive analysis of the recent research trends in artificial synapses and neurons based on organic electrochemical transistors (OECTs), highlighting their unique ability to achieve high transconductance and mixed ionic-electronic conduction at ultra-low operating voltages. We discuss how OECTs successfully replicate diverse synaptic plasticities and complex neuronal spiking behaviors through advanced material engineering and structural optimizations such as vertical architectures. Furthermore, this review discusses the implementation of high-order neural functions, including associative learning and logic operations, which are facilitated by the inherent electrochemical dynamics of organic semiconductors. Finally, overcoming current challenges in reliability and scalability will establish OECTs as a pivotal platform for low-power neuromorphic hardware and bio-integrated electronics.

MoS₂ has attracted significant attention as a next-generation semiconductor material to overcome the physical scaling limits of silicon-based devices due to its atomic thinness and excellent electrical properties. However, high contact resistance and the formation of Schottky barriers resulting from interface defects during the metal deposition process remain major bottlenecks that degrade overall device performance and reliability. In this study, we fabricated MoS₂ FETs by employing Sb₂Te₃, van der Waals (vdW) contacts. Minimized interface inhomogeneity was achieved through a hemispherical stamp-based dry transfer of h-BN for device encapsulation. h-BN encapsulation decreased the hysteresis window in the ±25 V gate voltage range from 17 V to 11.5 V compared to un-capped devices, confirming that charge trapping phenomena induced by external environmental factors were suppressed. Consequently, the dry transfer technique of h-BN using a hemispherical stamp demonstrated in this study provides a potential solution for securing the long-term reliability of MoS₂ devices with vdW contact by minimizing interface contamination.

Metal halide perovskite materials have emerged as promising candidates for next-generation optoelectronic applications owing to their outstanding optical properties and tunable emission characteristics. However, their practical application is hindered by poor environmental stability, especially under conditions of heat, moisture, and UV exposure, necessitating effective encapsulation strategies. This review summarizes recent progress in enhancing the environmental stability of perovskite nanocrystals through polymer matrix embedding, inorganic oxide encapsulation, and compositionally matched core-shell structures using homogenous perovskite derivatives. We discuss how polymers enhance the environmental and moisture stability of perovskite nanocrystals, how oxide-based shells (e.g., SiO₂, TiO₂) contribute to thermal robustness and barrier protection, and how homostructural core-shells provide lattice-matched defect passivation with improved long-term durability. A comprehensive understanding of the advantages and limitations of each encapsulation strategy, along with their rational integration, can accelerate the commercialization of perovskite-based technologies in various applications such as highcolor- purity displays, color conversion filters, and flexible optoelectronic devices.

Department of Electric Materials Engineering, Kwangwoon University, Seoul 01897, Korea (Received June 13, 2024; Revised July 8, 2024; Accepted July 10, 2024) Abstract: Wide bandgap (WBG) devices, especially SiC, are gaining traction as materials for high-power EV conversion devices due to their superior efficiency and switching capabilities compared to Si-based power devices. SiC allows for high power, high temperature, and high frequency applications because of its outstanding thermal conductivity, saturation velocity, and dielectric breakdown field. SiC-based MPS diodes combine the advantages of SiC-based SBDs and PiN diodes, allowing high-frequency switching operation with low leakage currents under high voltage conditions. However, MPS diodes exhibit snapback phenomena influenced by the P⁺ region’s size, necessitating optimization. A TCAD simulation studied the impact of the P+ region’s depth and width on MPS diode performance. Increasing the P⁺ width raised the On-specific resistance (R_on,sp) and lowered the maximum voltage during snapback (V_snap). Increasing the depth decreased both Breakdown voltage (BV) and V_snap. A trade-off between the semiconductor performance index BFOM and V_snap was identified, leading to optimized dimensions. The optimized MPS diode shows a low V_snap of about 3.89 V and a high BFOM of 1.72 GW·㎠, highlighting its potential as a next-generation high-performance power conversion device.

Recently, sterilization technology has received increasing interest due to the COVID-19 pandemic and required safety precautions. Particularly, sterilization devices using near ultraviolet (UV) with a 405 nm wavelength are also drawing attention. It has a UV-C wavelength and other sterilization effects. Its blue-colored light on the boundary between UV and visible light is used as a light-emitting diode (LED) lamp for 405 nm sterilization, owing to its longer wavelengths than UV rays. However, the 405 nm wavelength contains blue light that can damage the eyes and skin during prolonged exposures and affect the emotional and biological parts of the body. Currently, 405 nm sterilization LED light registers are circulating in the market. However, they have not undergone safety tests for blue-light hazards. Thus, with the active distribution of sterilization LED lights, solid safety standards and management systems are essential to protect users from blue-light hazards. Accordingly, in this study, we conducted spectral radiance and spectral radiative luminance tests on 405 nm sterilization LED registers available in the market by the measurement criteria of IEC 62471. Safety standards must be established to secure users' safety against blue light hazards at a time when 405nm sterilization LED lights are actively distributed due to COVID-19.

In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

Thermoelectric (TE) heating and cooling devices, which are able to directly convert thermal energy into electrical energy and vice versa, are effective and have exhibited a potential for energy harvesting. With the increasing consumer demands for various wearable electronics, organic-based TE composite materials offer a promise for the TE devices applications. Conductive polymers are widely used as flexible TE materials replacing inorganic materials due to their flexibility, low thermal conductivity, mechanical flexibility, ease of processing, and low cost. In this review, we briefly introduce the latest research trends in the flexible TE technology and provide a comprehensive summary of specific conductive polymer-based TE material fabrication technologies. We also summarize the manufacture for high-efficiency TE composites through the complexation of a conductive polymer matrix/inorganic TE filler. We believe that this review will inspire further research to improve the TE performance of conductive polymers.

In this study, composite transparent electrodes were fabricated either from a conductive polymer poly(3,4- ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) or silver nanowire (AgNW). Three transparent electrodes such as PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW were fabricated. As for a transparent electrode, measured sheet resistance values were 89.6, 60.6 and 28.6 Ω/sq, and the transmittance values were 80.2, 82.0 and 83.8% while surface roughness (Rq) values were 4.1, 8.1, 20.4 nm for PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW, respectively. To verify the overall performance of these composite electrodes, we applied these electrodes to the top electrode of the solution-processed organic solar cells (OSCs). PEDOT:PSS provided the best performance with a fill factor (FF) of 51.2% and a photoconversion efficiency (PCE) of 2.2%, while traditional metal top electrode OSC provided FF of 60.5% and PCE of 3.1%.

Pb(Sb_0.5Nb_0.5)x(Zr_0.51Ti_0.49)_1-xO₃ (abbreviation: PSN-PZT) ceramics were synthesized, using conventional bulk ceramic processing technology, with various PSN doping contents. The maximum density of PSN-PZT was 97% of the theoretical density in the samples sintered at 1,250℃. The maximum values of the piezoelectric properties achieved using the conventional processes were: k_p of 0.625, d₃₃ of 531 pC/N, and g₃₃ of 33 mV·m/N. Finally, we fabricated a piezo-speaker with the optimized PSN-PZT ceramics. The SPL of the speaker was measured at a distance of 1 m, with a driving voltage of 40 V_rms in the frequency range of ~300 Hz to 9 kHz. The measured SPL_max was at a very high level (95 dB), which was superior in quality in comparison with those of other commercial products.

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

In this work, we conducted a study on cell strings of high efficiency and high power solar cell modules via simulation. In contrast to the conventional module manufacturing method, the simulation was performed by connecting cutting cells divided into four parts from 6-in size using the electrically conductive adhesive (ECA). The resistance of the ECA added in series connection was extracted using an experimental method. This resistance was found to be 3 mΩ. Based on this simulation, we verified the change in efficiency of the string as a function of the number of cutting cell connections. Consequently, the cutting cell efficiency of the first 20.08% was significantly increased to 20.63% until the fifth connection; however, for further connections, it was confirmed that the efficiency was saturated to 20.8%. Connecting cutting cells using ECA improves the efficiency of the string; therefore, it is expected that it will be possible to fabricate modules with high efficiency and high power.

The power law is very important in gas sensing for the determination of gas concentration. In this study, the resistance of a gas sensor based on poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate＋graphene oxide composite was found to exhibit a power law dependence on hydrogen concentration at 150℃. Experiments were carried out in the gas concentration range of 30~180 ppm at which the sensor showed a sensitivity of 6~9% with a response and recovery time of 30s.

The electrocaloric effect in 0.94(Bi_0.5Na_0.5)TiO₃+0.06KNbO3+0.9 wt% G.F.ferroelectricceramics was observed in terms of the temperature change (ΔT) of the fabricated ceramics, Curie temperature Tc, and applied electric field. The specimens were fabricated by a conventional solid-state reaction. T_c appeared near 165∼170℃. The P-E hysteresis showed a tendency to slim down with a temperature increase and finally was slimmest near 150℃. With the increase of temperature, the polarization revealed a gradual decrease, and a sharp decline near T_c. When an electric field of 45 kV/cm was applied, the largest polarization was shown. The maximum value of the temperature change (ΔT=0.31℃) was obtained at 165℃ under an applied electric field of 45 kV/cm.

In this paper, we fabricated flexible CNT/PVDF (carbon nanotube / polyvinylidene fluoride) piezoelectric composite device with flexible poly(3,4-ethylenedioxythiophene) : polystyrene sulfonate (PEDOT:PSS) conducting polymer electrode using spray coating method. We tried to improve the piezoelectric performance from the CNT/PVDF composite film by enhancing electrical conductivity of the PEDOT:PSS electrodes. Electrical conductivity of the PEDOT:PSS electrode was enhanced by dipping it into the EG (ethylene glycol) solvent. Changes of chemical composition of the PEDOT:PSS electrode were analyzed with the dipping time by XPS (x-ray photoelectron spectroscopy) in terms of oxygen (O1s). Finally, Piezoelectric performances such as output voltage and current were measured with the dipping time. We found that enhanced electrical conductivity of the PEDOT:PSS electrodes resulted in improvement of the piezoelectric performance of the CNT/PVDF films.

It is highly important issue to use an energy efficiently for sustainable prosperity of mankind. From this point of view, using LED lighting can be a good alternative because it has a lot of advantages such as high efficiency, long life time and eco-friendly manufacturing process. That is the reason why using LED lighting has been encouraged worldwide. However, in situations that LED lighting is replacing traditional lighting quickly, the problem of the flicker of LED lighting has emerged as an important issue. Therefore, in foreign countries like US or Japan in order to ensure the reliability of LED lighting, study for flickering effects of the human body and test methods are have been actively conducted. But related research in domestic situation is an insufficient condition. In this study, a flicker characteristic was measured conventional lamps such as incandescent lamps or fluorescent lamp and 81 items of LED lightings which are distributed in domestic markets.

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect and low sintering temperature, PLZT(8/65/35) ceramics was fabricated using conventional solid-state method with the variation of sintering temperature (1,050℃, 1,100℃, 1,200℃). The XRD pattern of all specimens indicated general perovskite structure with secondary phase. From the results of temperature dependence of dielectric constant, the TC (ferroelectric-paraelectric phase transition temperature) was shifted toward high temperature with increasing sintering temperature. When the specimen was sintered at 1,100℃, the optimal value of .T ∼0.349℃ in ambient temperature of 215℃ was appeared. It is considered that PLZT(8/65/35) ceramics possess the possibility of refrigeration device application.

Prevailing dissemination of machine tools and cutting technology have caused drastic developments of high speed dry machining with work materials of high hardness, and demands on the high-hardness-materials with high efficiency have become increasingly important in terms of productivity, cost reduction, as well as environment-friendly issue. Addition of Si to TiAlN has been known to form nano-composite coating with higher hardness of over 30 GPa and oxidation temperature over 1,000℃. However, it is not easy to add Si to TiAlN by using conventional PVD technologies. Therefore, Ti-Al-Si-N have been prepared by hybrid process of PVD with multiple target sources or PVD combined with PECVD of Si source gas. In this study, a single composite target of Ti-Al-Si was prepared by powder metallurgy of MA (mechanical alloying) and SPS (spark plasma sintering). Properties of he resulting alloying targets were examined. They revealed a microstructure with micro-sized grain of about 1~5 ㎛, and all the elements were distributed homogeneously in the alloying target. Hardness of the Ti-Al-Si-N target was about 1,127 Hv. Thin films of Ti-Al-Si-N were prepared by unbalanced magnetron sputtering method by using the home-made Ti-Al-Si alloying target. Composition of the resulting thin film of Ti-Al-Si-N was almost the same with that of the target. The thin film of Ti-Al-Si-N showed a hardness of 35 GPa and friction coefficient of 0.66.

In this study, the effect of vanadium oxide (V₂O₅) content and pre-sintering atmosphere on sealing property of glass frit that consisted of V₂O₅-BaO-ZnO-P₂O₅-TeO₂-CuO-Fe₂O₃ SeO₂ was investigated by XPS (X-ray photoelectron spectroscopy). The content of V₂O₅ was changed to 15, 30, and 45 mol%, and the pre-sintering was carried out in air and N₂ condition, respectively. XPS analysis conducted before and after laser irradiation with identical sample. Before laser treatment, glass frits that were pre-sintered at air condition showed both V₄₊and V₅₊, but the valence state was changed to V₅₊ after laser irradiation when the glass frits contained 30 and 45 mol% V₂O₅; this change led to non-adhesive property. On the other hand, glass frits that were pre-sintered at N₂ condition exhibited only V₄₊ and it showed fine adhesion irrespective of the V₂O₅ content. As a result, the existence of V₄₊ seems to be a major factor for controlling the adhesive property of glass frit for laser sealing.

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ω-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect, PLZT(8/65/35) composition was fabricated using conventional solid-state method. The Curi temperature of this composition PLZT ceramics was 230℃, and the P-E hysteresis loops of the PLZT ceramics as a fuction of temperature became slim by degrees with higher temperatures. The maximum value of .T of 0.243°C in ambient temperature of 215°C with 30 kV/cm was appeared. It is considered that PLZT ceramics possess the possibility of refrigeration device application.

This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

We fabricate a single particle-microcapsule type electronic paper using electrophoresis, which is different with a reported dual particle-microcapsule type and of which electro-optical researches are not reported. So we analyzed a basic properties, such as reflectivity, response time, and driving voltage. Our display panels having various cell-gaps of 30 ㎛, 34 ㎛, 38 ㎛, 42 ㎛, and 46 ㎛ are inspected. As a results, a driving voltage is defined to 10 V and desirable cell-gap is 30 ㎛ or 34 ㎛. Considering a mechanical strength, the optimum cell-gap is 34 ㎛ for the single particle type electronic paper.

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized n+ Si wafers. The thickness of 30 nm Al2O3 films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The Al2O3 films were rapid-annealed at 400 , 600 , 800 , and 1,000 , respectively. Active layers of ZTO films were deposited on the Al2O3/SiO2 coated n+ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of Al2O3 films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

In this work, in order to develop the ceramics with an excellent electrocaloric effect, [Bi0.5(Na0.84K0.16)0.5]TiO3 ceramics were fabricated by conventional solid state reaction method. The ceramics was observed as rhombohedral phase by X-ray diffraction patterns. To investigate the electrocaloric effect of the ceramics, P-E hysteresis loops were measured at various temperature. The temperature change ΔT of these ceramics was calculated using the Maxwell``s relations. The maximum value of temperature change ΔT was obtained as 0.3 1℃ at 165℃ under applied electric fields 45 kV/cm.

Ti was deposited on the Al substrate using DC magnetron sputtering with changing the N2 gas for the possible application of a solar absorbing layer. N2 gas ranged from 50 to 75 sccm was systematically applied in the 5 sccm interval and the variation of the absorption rate was investigated. Microstructural examination and elemental analysis indicate that Ti was reacted with N2 gas and formed TiNOx compound. As compared with the film without any exposure of N2 gas, absorption rate improved by more than 20%. Typically the average absorption of TiNOx fim with 65% of N2 gas was about 99% in the visible range, and the average absorption was more than 90% in the infrared absorption region respectively.

Bottom-gate tin oxide (SnO2) thin film transistors (TFTs) were fabricated on N+ Si wafersused as gate electrodes. 60-nm-thick SnO2 thin films acting as active layers were sputtered onSiO2/Al2O3 films. The SiO2/Al2O3 films deposited on the Si wafers were employed for gate dielectrics. Inorder to increase the resistivity of the SnO2 thin films, oxygen mixed with argon was introduced into thechamber during the sputtering. The mobility of SnO2 TFTs was measured as a function of the flow ratioof oxygen to argon (O2/Ar). The mobility variation with O2/Ar was analyzed through studies oncrystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-rayphotoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state ofSnO2 films. The mobility decreased with increasing O2/Ar. It was found that the decrease of the mobilityis mainly due to the decrease in the polarizability of SnO2 films.

Phase transition properties of the copolymer films of polyvinylidene fluoride (PVDF) and trifluoroethylene(TrFE), P(VDF-TrFE), were studied with X-ray diffraction (XRD) and polarization modulated ellipsometry (PME). XRD studies on both Langmuir-Blodgett (LB) films and spin coated films exhibit conversions from ferroelectric phase to paraelectric phase at 108±2℃ on heating and paraelectric phase to ferroelectric phase at 78±2℃ on cooling. The presence of the ferroelectric-paraelectric phase transition is also confirmed by the PME technique for the first time in this study. PME was proved to be a very sensitive tool in the measurement of the structural changes at the nano-thickness films.