In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 μm, and the on-state voltage drop was the lowest at 3.5 μm. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower RDS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys’ process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a 20℃ change in temperature from 1,000 to 1,160℃ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of 45 Ω·cm, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thickepitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, t_off, of SITH, which may be reduced to below ~0.26 μs for the proposed 1,700 V SITH devicesafter optimization.

This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings 13㎛ and the field ring width was 5㎛. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of 3 ㎛.

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was 32 ㎛. The doping concentration of floating island was 5 × 1,012 ㎠. And the width of floating island was 3 ㎛. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and 0.108 Ω㎠ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

This research was analyzed thermal characteristics that was appointed disadvantage when smart LED driver ICs was packaged and we applied extracted thermal characteristics for optimal layout design. We confirmed reliability of smart LED driver ICs package without additional heat sink. If the package is not heat sink, we are possible to minimize package. For extracting thermal loss due to overshoot current, we increased driver current by two and three times. As a result of experiment, we obtained 22 mW and 49.5 mW thermal loss. And we obtained optimal data of 350 mA driver current. It is important to distance between power MOSFET and driver ICs. If thhe distance was increased, the temperature of package was decreased. And so we obtained optimal data of 3.7 mm distance between power MOSFET and driver ICs. Finally, we fabricated real package and we analyzed the electrical characteristics. We obtained constant 35 V output voltage and 80% efficiency.

Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys`` T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

This paper was analyzed electrical characteristics of super junction power MOSFETconsidering to charge imbalance. We extracted optimal design and process parameter at -15% of chargeimbalance. Considering extracted design and process parameters, we fabricated super junction MOSFETand analyzed electrical characteristics. We obtained 600∼650 V breakdown voltage, 224∼240 mΩ onresistance. This paper was showed superior on resistance of super junction MOSFET. We can use forautomobile industry.

This paper was showed latch up characteristics of super junction power MOSFET by parasiticthyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was 90°, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

In this paper, we analyze electrical characteristics of n/p-pillar layer according to trench anglewhich is the most important characteristics of SJ MOSFET and core process. Because research target is600 V class SJ MOSFET, so conclusively trench angle deduced 89.5 degree to implement the breakdownvoltage 750 V with 30% margin rate. we found that on resistance is 22 mohm·cm2 and threshold voltageis 3.5 V. Moreover, depletion layer of electric field distribution also uniformly distributes.

This paper was developed and described core-process to implement low on resistance whichwas the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation,SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process wassimilar to genral planar MOSFET, so the process was the same as the general planar MOSFET. Andthen to develop deep trench process which was main process of the whole process, after finishing photomask process, we developed deep trench process. We expected that developed process was necessary todevelop SJ MOSFET for automobile semiconductor.

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed 6,580 um ×5,680 um of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the ``ideal`` breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and 0.4 mΩcm2ultra low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.