The dielectric and piezoelectric properties of the ferroelectric BaTiO₃ were measured and analyzed using both strong and weak electric field conditions. To measure the electric field induced polarizations and strains, a high voltage source and the measuring circuit were used and the dielectric constants were measured with an impedance analyzer. The spontaneous polarization of BaTiO₃ at room temperature was calculated as 17 μC/cm² based on the lattice structure and internal ion location, which is in good agreement with the experimental results. The polarization and strain hysteresis curve according to the electric field were analyzed in terms of lattice structure and ion position. The magnitude of remanent polarization is proportional to the offset distance of Ti⁴⁺ ion from the lattice center. The magnitude of dielectric permittivity is proportional to the degree to which Ti⁴⁺ ion can move freely inside the lattice. The magnitude of piezoelectric constant d₃₃ is proportional to how much Ti⁴⁺ ion distorts the lattice as it moves inside the lattice.

This study proposes an optimization strategy for the over-current protection (OCP) parameters of a lithium iron phosphate (LiFePO₄, LFP) battery system used in electric golf carts operating under high motor-load conditions. Real-world hillclimbing tests were conducted under four clearly defined payload/passenger conditions to analyze the transient discharge-current pro-file, voltage sag, and cell-temperature response. The maximum discharge current reached -238.2 A under the 200 kg cargopayload and one-passenger condition, and the current interval exceeding 150 A lasted up to 27 s. The maximum instantaneous power was 11.05 kW. Thermal analysis showed that the cell-temperature rise was within 2°C and the maximum measured cell temperature was 22.3°C. Linear regression of voltage and current yielded R² = 0.9368 and dV/dI = 0.0126 Ω, which was used as the DC internalresistance estimate. Based on these quantitative results and the cell specification limit of 300 A continuous discharge, the OCP threshold was reviewed from 250 A to 280 A to improve driving continuity while remaining below the allowable continuous-discharge current. EIS-based SOH estimation and the AI-BMS variable protection logic are presented as an extension framework for reflecting temperature and aging effects in future OCP-setting decisions.

This paper proposes a circular sequential lighting control method to reduce current imbalance and luminance deviation among multiple LED modules in AC-powered LED lighting systems. Conventional fixed-sequence lighting control repeatedly prioritizes the same LED modules in every rectified voltage cycle, which leads to unequal current distribution, luminance non-uniformity, and the accelerated degradation of specific modules during long-term operation. To address these limitations, a circular sequential lighting strategy is introduced, in which the lighting order is cyclically rotated at every rectified cycle, ensuring that all LED modules experience equal lighting opportunities. A prototype AC-LED lighting system consisting of four series-connected LED modules was implemented and experimentally evaluated. The results demonstrate that, while the conventional fixed-sequence method produces a maximum average current deviation of up to 1.6 mA among modules, the proposed method equalizes the average current across all modules to approximately 17.1 mA. Furthermore, the flicker index remains at 0.13, which is comparable to that of the conventional method, indicating that luminance uniformity is improved without degradation of optical performance. The proposed circular sequential lighting control effectively distributes electrical stress, enhances luminance uniformity, and improves long-term reliability, making it a practical and efficient solution for high-quality AC-LED lighting applications.

Lead-free bismuth sodium titanate (BNT)-based ceramics have attracted strong attention as environmentally benign dielectric materials for high-efficiency electrostatic energy-storage capacitors. A key challenge is that pristine BNT typically exhibits large hysteresis, high remnant polarization, and limited dielectric reliability, which restrict recoverable energy storage and efficiency under practical electric fields. Here, we present a focused mini-review of recent studies to clarify how composition design, phase boundary tuning, defect chemistry, and microstructural control collectively enable slim or pinched polarization-electric field (P-E) behavior and improved energy-storage functionality in BNT-related bulk ceramics. The reviewed outcomes consistently show that stabilizing relaxor states governed by polar nanoregions (PNRs), often via solid-solution engineering and secondary relaxor/antiferroelectric-like incorporation, suppresses irreversible switching and reduces hysteresis loss, while densification and grain-size control enhance electrical homogeneity and breakdown strength. In addition, defect-mediated tuning of oxygen vacancy-related complexes is highlighted as an independent lever to control relaxor ergodicity and polarization reversibility, providing a complementary route to slim-loop optimization. These insights are expected to guide integrated design strategies that couple phase/relaxor-state engineering with defect and microstructure optimization, accelerating the development of reliable, temperature-robust, lead-free dielectric capacitors based on BNT-related ceramics.

The quench behavior of wires for superconducting fault current limiters at DC faults was simulated, with a focus on the effect of capacitor discharge on the quench. The behavior was also expressed in mathematical forms to facilitate a better understanding of the simulation results and for rough analytical estimations of the wire length suitable for the circuit voltage and capacitance. The quench resistance development behavior for various wire lengths and circuit capacitances was simulated using the model developed in the previous work. The quench behavior was expressed in mathematical forms, reflecting the concept of heat balance. During the quench, the wire temperature increased more slowly for longer wires, but was found to increase in a similar pattern. The wire length estimated by the mathematical formula was close to the one obtained by the simulation, with an error range of a few %. The calculations will be used to estimate effectively the length of wires needed to build superconducting fault current limiters for applications in DC power systems.

Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×10¹¹ Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.

To ensure the long-term reliability of flexible photovoltaic (FPV) modules, it is crucial to develop an effective moisture barrier layer that prevents the infiltration of moisture and oxygen. We developed such a layer composed of parylene (700 nm) and AlOx (70 nm), optimizing its material properties, moisture-blocking performance, and processing conditions. The barrier layer applied to the Ethylene Tetrafluoroethylene (ETFE) substrate demonstrated a water vapor transmission rate (WVTR) of 6.33 × 10^-2 g/m²/day and an average visible light transmittance (AVT) of 85.3% over the 380-780 nm wavelength range. For the FPV module with this barrier, Damp/Heat (DH) reliability testing was conducted at 85℃ and 85% relative humidity for up to 1,000 hours. During testing, the power conversion efficiency (PCE) decreased slightly from 25.4% (0 hr) to 24.7% (1,000 hr), reflecting a minimal reduction of only 0.7%. The primary cause of degradation was identified as a -4% relative change in shortcircuit current density (JSC) before and after DH testing. Consequently, the ETFE/parylene/AlOx multilayer moisture barrier proved highly effective in ensuring the long-term reliability of solar modules.

Ga₂O₃ is an ultra-wide bandgap semiconductor material that offers superior electrical properties for high-voltage power electronics but suffers from poor thermal conductivity compared to conventional semiconductors. To overcome this thermal limitation, we developed Ga₂O₃/4H-SiC heterojunction Schottky barrier diodes that utilize the high thermal conductivity of SiC substrates. Using the aerosol deposition method, we successfully fabricated devices with different Ga₂O₃ film thicknesses (0.8-1.4 μm) and achieved exceptional electrical performance with the 0.8 μm device showing a specific on-resistance of 41 mΩ·cm² and a leakage current as low as 1.26 × 10^-10 A/cm² while maintaining stable operation up to 200℃. The devices demonstrated breakdown voltages reaching 2,365 V and maintained excellent rectification ratios above 1010 even at elevated temperatures. All fabricated devices with different film thicknesses showed consistent high-temperature stability, confirming the effectiveness of the heterojunction approach. These results provide a viable pathway for developing thermally stable, high-performance power devices essential for next-generation electric vehicle and renewable energy applications

With the rapid development of digital technologies such as IoT, AI, and big data, electrical energy consumption is rapidly increasing. Electrical facilities that supply electrical energy are operated with high reliability and stability for end-of-life time. In addition, depending on the type of electrical load that consumes electrical energy in various forms, electrical insulation systems deteriorate due to electrical and thermal stress, which reduces electrical and mechanical insulation strength. Due to such continuous stress and electrical transient phenomena, electrical facilities may experience electrical accidents due to electrical insulation breakdown before the expected design lifetime. In addition, periodic inspections according to related regulations must be conducted to prevent unexpected electrical accidents, but this leads to problems in which the electrical facilities cannot be turned off. Therefore, it is believed that an uninterruptible diagnostic judgment technique that determines compliance with related regulations such as electrical facility technology standards, internal wiring regulations, and inspection regulations without turning off the electrical facilities and at the same time detects abnormal conditions of the facilities early, it is possible to prevent electrical accidents and improve the efficiency of electrical facilities. In this paper, we propose an uninterruptible power diagnosis judgment technique that can prevent or reduce electrical accidents in cast-iron transformers by applying judgment criteria of diagnostic sensors for various types of measurement parameters that can diagnose and evaluate the presence or absence of abnormalities in electrical equipment, including partial discharge, and AI algorithms learned from data of diagnostic sensors.

Drain Induced Barrier Lowering (DIBL) was analyzed when the channel of Gate-All-Around (GAA) FET, which is the most promising in the miniaturizing transistor structure, has an elliptic cross-section. The oxide film structure used a stacked Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) structure using SiO₂ and ferroelectric. An analytical DIBL model was presented to analyze the DIBL in elliptic GAA FET with ferroelectric. Its validity was proven by comparing the results of other papers. As a result, the Drain Induced Barrier Rising (DIBR) effect, that is, the negative DIBL effect, appeared depending on the ferroelectric thickness tfe, and the ratio of the remanent polarization Pr and coercive field Ec in the ferroelectric, Pr/Ec. The DIBL varied linearly with tfeEc/Pr, and the slope depended on the rate of change for the drain voltage of the ferroelectric charge Q, dQ/dVds. The tfeEc/Pr value satisfying DIBL=0 mV/V decreased as eccentricity increased. The ferroelectric thickness tfe will have to be decreased because the subthreshold swing increases if the Pr/Ec is increased to reduce the tfeEc/Pr value. The threshold voltage increased at this time, but the effect was minimal.

Recently, oxide semiconductors have assumed a pivotal role in electronic displays and transparent electronic devices such as amorphous indium gallium zinc oxide (a-IGZO), characterized by high electron mobility and excellent stability. a- IGZO is very suitable for next-generation applications such as flexible displays because it is possible to manufacture highperformance transistors even at low temperatures. However, since the electrical properties tend to deteriorate in hightemperature environments, research aimed at improving thermal stability is needed. In this study, a low-temperature plasma annealing process was introduced to improve the high-temperature stability of the a-IGZO thin film. This process enhances electron mobility by reducing defects in the a-IGZO film and provides stable device performance even under high-temperature conditions. As a result of the experiments of 5 min, 10 min, 15 min, and 20 min, the a-IGZO TFT, which was subjected to plasma annealing at 160℃ for 5 min, showed the best electrical performance, especially in charge mobility and current-voltage characteristics. The technical potential for improving the performance of a-IGZO-based display device was emphasized, and the foundation for applying this power generation to flexible displays and next-generation electronic devices was laid. Future research will focus on determining the optimal annealing conditions by exploring various temperature ranges and plasma parameters to integrate these results into the actual device manufacturing process. These efforts are expected advance significantly to advancing next-generation high-performance display technology.

The solution-based fabrication process for resistive random-access memory (ReRAM) offers several advantages over conventional vapor deposition processes, including simplicity, cost-effectiveness, and high versatility for coating complex structures over large areas. In this study, a TiO₂-based ReRAM device was fabricated using a solution process with Pt top and P⁺⁺-Si bottom electrodes. The synthesized TiO₂ films contain a residual Cl element as revealed by X-ray photoelectron spectroscopy (XPS). Reversible volatile resistance switching was observed due to the formation of conductive Ti-O-Ti networks in the TiO₂ layer. Post-annealing led to an increase in the threshold voltage (Vth). Asymmetric Current-Voltage characteristics was observed due to the different in the work functions of the electrodes. Additionally, the influence of compliance current settings on filament formation and hysteresis behavior was systematically investigated. The results demonstrated that higher compliance currents enhanced the hysteresis width for both positive and negative voltage bias conditions.

The quench behavior of coated conductors (CCs) was simulated with a focus on the initial stage of quenches, and the current limiting behavior of superconducting fault current limiters (SFCLs) at DC faults was calculated. Since the fault current reaches the peak in several ms in DC lines due to capacitor discharge, it is necessary to understand the initial quench behavior well. Considered in the simulation are characteristics of CCs in the flux-flow state, current sharing, non-uniform critical current distribution in CCs, and heat transfer to surroundings. The simulation fit data well. Using the CC model developed in the simulation, the current limiting behavior of SFCLs made of CCs at DC faults was calculated. Critical current distribution and heat transfer were found to affect the current limiting behavior of SFCLs less at DC faults. The calculation will contribute to the effective design of SFCLs for applications in DC lines.

This paper presented an analytical SS model to determine the subthreshold swing (SS) of an elliptic junctionless Gate- All-Around (GAA) FET using ferroelectric. Analyzing a GAA FET with an elliptic cross-section was essential because it is difficult to manufacture a perfectly circular GAA FET. The results of the proposed SS model agreed well with 2D numerical simulation. Using this analytical SS model, SS was analyzed for the eccentricity and the ratio (P_r/E_c) of permanent polarization P_r and coercive electric field E_c in an elliptic junctionless GAA FET with an MFMIS (Metal-Ferroelectric-Metal-Isulator- Semiconductor) structure using ferroelectric. As a result, the changing rate of the average surface potential due to the gate voltage increased and SS decreased as the eccentricity increased. It was found that the inner gate voltage amplified more than the outer gate voltage due to the ferroelectricity, better controlling the carriers in the channel, thereby reducing SS. As the P_r/E_c decreased, the changing rate of the ferroelectric charge for the outer gate voltage increased and SS decreased. As the eccentricity increased, the changing rate of SS for P_r/E_c decreased. There was no significant change in SS until the eccentricity was about 0.5. The SS began to decline above 0.5 due to the changes in ferroelectric charge, inner gate voltage, and average surface potential for the outer gate voltage.

This review addresses the development trends of dielectric ceramics, the key material for Multilayer Ceramic Capacitors (MLCCs), which are essential components in high-performance electronic devices. Traditional MLCCs have employed BaTiO₃ (BT)-based dielectrics to achieve high dielectric constant and low resistance. By minimizing oxygen vacancies and suppressing grain growth in BT materials, the temperature and voltage stability of MLCCs have been improved, leading to the development of MLCCs with diverse properties. However, the maximum dielectric constant of approximately 3000 in BT materials poses a limitation in overcoming the trade-off between rated voltage and capacitance density. Therefore, ultra-high permittivity dielectric materials have gained attention to meet the requirements of ultra-high-performance MLCCs, and ongoing research focuses on enhancing the temperature and frequency stability of these materials. This review analyzes the characteristics and limitations of conventional BT materials and explores recent research trends and future potential in developing new MLCCs based on ultra-high dielectric constant materials.

This paper presents a Si-NWFET-based LC-VCO design that includes an SCA, a P-type Si-NWFET varactor, a 1.2 nH LC tank, and a bias network to linearize the varactor’s C-V characteristics, enabling a wide oscillation frequency tuning range. The circuit achieves a 24 GHz oscillation frequency with a low power consumption of 16.8 μW at a control voltage (V_ctrl) of 0.7 V. Phase noise simulations indicate an excellent -109.62 dBc/Hz at a 1 MHz offset, confirming its applicability for RFIC systems. Additionally, the proposed LC-VCO demonstrates stable performance in five major corner process analyses, ensuring robustness under extreme conditions. These results validate the durability of the design and highlight the potential of Si-NWFETbased LC-VCOs as a viable, low-power, highly integrated solution for RFIC applications. The findings underscore the suitability of Si-NWFET technology as a promising alternative to current FinFET and CMOS processes in advanced circuit design.

We investigated the potential of IO:H thin films and hydrogen doping to improve current density and fill factor for enhancing the performance of silicon heterojunction solar cells. We revealed that a transmittance of 86.7% and work function of 5.4 eV could be achieved by injecting 3 sccm of hydrogen gas. The lattice constant of 1.037 nm at the AB site indicates an anion antibonding tendency, and the work function increases as the Fermi level shifts to the valence band. Based on these findings, we fabricated a silicon heterojunction solar cell and achieved an efficiency of 18.53%, while computer simulation confirmed a conversion efficiency of 24.65%, an open-circuit voltage of 724 mV, and a fill factor of 82.72% at a current density of 41.15 mA/㎠.

Department of Electric Materials Engineering, Kwangwoon University, Seoul 01897, Korea (Received June 13, 2024; Revised July 8, 2024; Accepted July 10, 2024) Abstract: Wide bandgap (WBG) devices, especially SiC, are gaining traction as materials for high-power EV conversion devices due to their superior efficiency and switching capabilities compared to Si-based power devices. SiC allows for high power, high temperature, and high frequency applications because of its outstanding thermal conductivity, saturation velocity, and dielectric breakdown field. SiC-based MPS diodes combine the advantages of SiC-based SBDs and PiN diodes, allowing high-frequency switching operation with low leakage currents under high voltage conditions. However, MPS diodes exhibit snapback phenomena influenced by the P⁺ region’s size, necessitating optimization. A TCAD simulation studied the impact of the P+ region’s depth and width on MPS diode performance. Increasing the P⁺ width raised the On-specific resistance (R_on,sp) and lowered the maximum voltage during snapback (V_snap). Increasing the depth decreased both Breakdown voltage (BV) and V_snap. A trade-off between the semiconductor performance index BFOM and V_snap was identified, leading to optimized dimensions. The optimized MPS diode shows a low V_snap of about 3.89 V and a high BFOM of 1.72 GW·㎠, highlighting its potential as a next-generation high-performance power conversion device.

Gallium oxide (Ga₂O₃) is emerging as a next-generation power semiconductor material due to its excellent electrical properties, including an ultra-wide bandgap of approximately 4.8 eV and a breakdown electric field of about 7 MV/cm. However, its low thermal conductivity of around 0.13 W/cmK presents significant challenges to the performance and reliability of Ga₂O₃- based devices. In this study, we employed the Silvaco TCAD simulator to analyze the thermal and electrical characteristics of Ga₂O₃ Schottky barrier diodes (SBDs) with heat sinks of varying thermal conductivities. The results demonstrate that heat sinks with higher thermal conductivity effectively mitigate the temperature rise in the device, leading to an increase in current density. The limitation in heat dissipation due to parasitic on-state resistance not only affects device performance but also impacts longterm reliability. Therefore, this study contributes to the development of effective thermal management strategies for Ga₂O₃-based power semiconductors.

Piezoelectricity refers to the phenomenon where mechanical stress is converted into electrical signals or, conversely, electrical signals are converted into mechanical stress. Ferroelectric materials, characterized by high dielectric permittivity and spontaneous polarization, retain their polarization even after the removal of an electric field. In such materials, poling plays a crucial role in enhancing the piezoelectric effect, with the process of aligning dipoles being known as poling. This review focuses on studies that have compared and analyzed the enhancement of piezoelectric properties in ceramics and polymers through two representative poling methods: AC poling (ACP) and DC poling (DCP). Even within the same category of ceramics or polymers, variations in piezoelectric properties are observed based on the material type, poling method, and poling conditions. Under certain conditions, ACP has been shown to provide superior poling effects compared to DCP. Through this review, we propose that ACP has the potential not only to replace the traditionally used DCP in the poling of piezoelectric materials but also to serve as a more effective method. This could spark increased interest in the study of poling methods for piezoelectric polymers, a field that has received relatively less attention.

(Bi_1/2Na_1/2)TiO₃(BNT) piezoelectric ceramics are one of the promising materials that can replace Pb(Zr, Ti)O₃(PZT) piezoelectric ceramics due to the high electromechanical strain properties. However, it is still difficult to use practical applications because the required electric field for inducing electromechanical strain is relatively higher than that of PZT ceramics. To overcome this problem, it has been intensively studied on doping impurity or modifying other ABO₃ for BNTbased piezoelectric ceramics. Therefore, this study investigated the effects of La₂O₃ doping on the phase transition behavior and electromechanical strain properties in BNT-SrTiO₃ (BNT-ST) lead-free piezoelectric ceramics. In the case of the temperaturedependent dielectric properties, it was confirmed that a phase transition from ferroelectrics to relaxors is induced with increasing La₂O₃ content. As a result, the electromechanical strain properties of BNT-ST ceramics were improved. The highest Smax/Emax value corresponding to 300 pm/V was obtained at 2 mol% La₂O₃-dopped BNT-ST ceramics. Accordingly, this study successfully demonstrated that La₂O₃ doping is effective on the inducing phase transition from ferroelectrics to relaxors and the improving electromechanical strain properties of BNT-ST lead-free piezoelectric ceramics.

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

In this paper, in order to analyze the PMU data of the accident section, we collected the raw data of a total of 35 PMU installed at the Yeonggwang substation and tried to find a way to analyze the data, and analyzed the data using Excel format and formula. As a result, the three-phase voltage and current data of the PMU were calculated using formulas in Excel and interpreted as effective and reactive power, and it was possible to check the effective and reactive power of the accident section through the graph to see why it was different from before the accident. As a result, it was confirmed that each power was greatly reduced in the graph of the effective and reactive power of the accident section, and it was confirmed that the loss occurred as the power of the accident section was greatly reduced.

The measurement of strain under an electric field has been widely employed to comprehend the fundamental principles of electro-mechanical responses in ferroelectric, piezoelectric, and electrostrictive materials. In particular, understanding the strain properties of piezoelectric materials in response to electrical stimulation is crucial for researching and developing components such as piezoelectric actuators, acoustic devices, and ultrasonic generators. This tutorial paper introduces the components and operational principles of the linear variable differential transducer (LVDT), a widely used displacement measurement device in various industries. Additionally, we present the configuration of an experimental setup using LVDT to measure the strain characteristics of ferroelectric, piezoelectric, or electrostrictive materials under the application of an electric field. This paper includes simple measurement results and analyses obtained through the LVDT experimental setup, providing valuable information on research methods for the electro-mechanical interactions of various materials.

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (Rs) in the nonlinear section extracted using Cheung’s formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

The low-temperature deposition of BaNi_(2-x)Co_xFe₁₆O₂₇ thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi_(2-x)Co_xFe₁₆O₂₇ thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi_(2-x)Co_xFe₁₆O₂₇ thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi_(2-x)Co_xFe₁₆O₂₇ and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, seriestype potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

High-density crossbar arrays based on storage class memory (SCM) are ideally suited to handle an exponential increase in data storage and processing as a central hardware unit in the era of AI-based technologies. To achieve this, selector devices are required to be co-integrated with SCM to address the sneak-path current issue that indispensably arises in such crossbar-type architecture. In this perspective, we first summarize the current state of tellurium-based threshold-switching devices and recent advances in the material, processing, and device aspects. We thoroughly review the physicochemical properties of elemental tellurium (Te) and representative binary tellurides, their tailored deposition techniques, and operating mechanisms when implemented in two-terminal threshold switching devices. Lastly, we discuss the promising research direction of Te-based selectors and possible issues that need to be considered in advance.

The fault current limiting characteristics of three-phase transformer type superconducting fault current limiter (SFCL), which consisted of three-phase primary and secondary windings wound on E-I iron core, one high-TC superconducting (HTSC) element connected with the secondary winding of one phase and another HTSC element connected in parallel with other two secondary windings of two phases, were analyzed. Unlike other three-phase transformer type SFCLs with three HTSC elements, three-phase transformer type SFCL using double quench has the merit to perform fault current limiting operation for three-phase ground faults with two HTSC elements. To verify its proper three-phase ground fault current limiting operation, three-phase ground faults such as single-line ground, double-line ground and triple-line ground faults were generated in three-phase simulated power system installed with three-phase transformer type SFCL using double quench. From analysis of its fault current limiting characteristics based on tested results, three-phase transformer type SFCL using double quench was shown to be effectively operated for all three-phase ground faults.

An algorithm was developed to detect and block serial arc currents using HPF. The AC series arc problem is that the load current is greater than the fault current and no leakage current occurs. As a solution, an arc detection method utilizing differences in high- frequency amplitudes was developed. HPT was applied to the load current and FFT was applied to eliminate low frequencies. An algorithm has been developed to detect arc waveforms when they exceed a certain value compared to the average of normal waveforms. Using one cycle of data, arc detection is faster and arc accidents are prevented.