Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

BCl3/Ar 플라즈마에 Cl2 가스 첨가에 따른 TiN 박막의 식각 특성

엄두승, 우종창, 김동표, 김창일

Etch Characteristics of TiN Thin Film with Addition Cl2 Gas in BCl3/Ar Plasma

Doo Seung Um, Jong Chang Woo, Dong Pyo Kim, Chang Il Kim
J Korean Inst Electr Electron Mater Eng 2008;21(12):1051-1056.
Published online: December 1, 2008
  • 43 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Etch Characteristics of TiN Thin Film with Addition Cl2 Gas in BCl3/Ar Plasma
J Korean Inst Electr Electron Mater Eng. 2008;21(12):1051-1056.   Published online December 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.12.1051
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Etch Characteristics of TiN Thin Film with Addition Cl2 Gas in BCl3/Ar Plasma
J Korean Inst Electr Electron Mater Eng. 2008;21(12):1051-1056.   Published online December 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.12.1051
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.