Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

Min Seok Kang; Kyoung Sook Moon; Sang Mo Koo

Articles

Page Path

4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석

강민석, 문경숙, 구상모

Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

Min Seok Kang, Kyoung Sook Moon, Sang Mo Koo

J Electr Electron Mater 2010;23(6):436-439.
Published online: June 1, 2010

6 Views
0 Download
0 Crossref
0 Scopus

prev next

Full Article

Download PDF

Keywords: Silicon carbide, Transient, Interface charge, DMOSFET

Cite

CITE

export

Copy Download

Format

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

RIS — For EndNote, ProCite, RefWorks, and most other reference management software
BibTeX — For JabRef, BibDesk, and other BibTeX-specific software

Include:

Citation for the content below
Citation and abstract for the content below

Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

J Electr Electron Mater. 2010;23(6):436-439. Published online June 1, 2010

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

RIS — For EndNote, ProCite, RefWorks, and most other reference management software
bib — For JabRef, BibDesk, and other BibTeX-specific software

Include:

Citation for the content below
Citation and abstract for the content below

Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

J Electr Electron Mater. 2010;23(6):436-439. Published online June 1, 2010

Articles

Page Path

4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석

Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

Full Article

CITE

Download Citation

Format:

Include:

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS