Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ-H2O-TMA-H2O). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at 100℃, so that the Al-doped film of 5 at% shows the lowest resistivity (1.057×10(-2) Ω·cm) and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at 250℃ demonstrates the superior resistivity (1.237×10(-4) Ω·cm).
