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나노,산화물 전자재료 : 멤리스터 기반 미분 및 적분제어 회로에서의 커패시턴스 변화에 따른 히스테리시스 곡선 특성 분석

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Nano and Oxide Electronics : Regular Paper ; In Memristor Based Differential or Integral Control Circuit, Hysteresis Curve Characteristic Analysis According to Capacitance

Jinwoong Choi, Youngsea Mo, Hanjung Song
J Korean Inst Electr Electron Mater Eng 2015;28(10):658-664.
Published online: October 1, 2015
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Nano and Oxide Electronics : Regular Paper ; In Memristor Based Differential or Integral Control Circuit, Hysteresis Curve Characteristic Analysis According to Capacitance
J Korean Inst Electr Electron Mater Eng. 2015;28(10):658-664.   Published online October 1, 2015
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Nano and Oxide Electronics : Regular Paper ; In Memristor Based Differential or Integral Control Circuit, Hysteresis Curve Characteristic Analysis According to Capacitance
J Korean Inst Electr Electron Mater Eng. 2015;28(10):658-664.   Published online October 1, 2015
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