This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to 800℃. At annealing temperature of 600℃, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of 800℃ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at 200℃.
Abstract: This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at 120℃ using single-precursor hexamethyildisilane: Si(2)(CH(3))(6) (HMDS) as Si and C precursors. 0～40 sccm N(2) gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/cm(2), respectively. The thermal and mechanical properties of the N(2) doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of N(2) flow rate. Maximum young`s modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm N(2), respectively.
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High Electrical Conductivity and High Hardness in Cubic Silicon Carbide Single Crystals Yunfan Yang, Zhaolong Liu, Guobin Wang, Da Sheng, Yehua Huang, Hui Li, Xu Chen, Huiyang Gou, Wenjun Wang, Zesheng Zhang, Junwei Yang, Xiaolong Chen Crystal Growth & Design.2026; 26(1): 678. CrossRef
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