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"Cleaning"

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"Cleaning"

Insulation Materials : Regular Paper ; Effects of Annealing Ambient on the Anti-Pollution and Mechanical Properties of Functional Film Coated on the Ceramic Substrate
Bowen Shan, Hyunil Kang, Won Seok Choi, Yeun Ho Joung
J Electr Electron Mater 2016;29(4):215-217.   Published online April 1, 2016
For the improvement of the anti-pollution properties of porcelain electrical insulators, in this study, we have applied the functional film to the surface of insulator. The functional films were coated on the ceramic substrates which components were like the porcelain electrical insulator. The coating material was applied to ceramic substrate by spray coating method and then the film was cured at around 300oC for 10 minutes with different gas ambient, such as O2, N2, and only vacuum. We have measured the contact angle of the coated surface, and obtained the lowest angle (8.9o) and a strong hydrophilic property at vacuum condition. The anti-pollution properties were measured, revealing that as the contact angle decreased, the anti-pollution properties improved. The mechanical hardness and adhesion were both excellent regardless of the annealing ambient.
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Diagnostic tests were performed on two high voltage (HV) motor stator windings. These tests included the measurement of insulation resistance, polarization index, AC current, dissipation factor (tanδ) and partial discharge (PD) magnitude. Surface contamination of HV motor stator windings has an effect on the AC current and tanδ. When the stator windings were finished cleaning and insulation reinforcement, the increase rate of AC current (ΔI) and dissipation factor (Δtanδ) were very small compared to those before cleaning. However, the PD magnitude remained the same. These tests show that cleaning and insulation reinforcement of HV motor stator windings can reduce the insulation failure.
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Regular Paper : Particle Removal on Buffing Process After Copper CMP
Woon Ki Shin, Sun Joon Park, Hyun Seop Lee, Moon Ki Jeong, Young Kyun Lee, Ho Jun Lee, Young Min Kim, Han Chul Cho, Suk Bae Joo, Hae Do Jeong
J Electr Electron Mater 2011;24(1):17-21.   Published online January 1, 2011
Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.
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Removal of Photoresist Mask after the Cl2/HBr/CF4 Reactive Ion Silicon Etching
Tae Kyung Ha, Jong Chang Woo, Gwan Ha Kim, Chang Il Kim
J Electr Electron Mater 2010;23(5):353-357.   Published online May 1, 2010
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Effect of PVA Brush Contamination on Post-CMP Cleaning Performance
Han Chul Cho, Min Jong Yuh, Suk Joo Kim, Hae Do Jeong
J Electr Electron Mater 2009;22(2):114-118.   Published online February 1, 2009
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ITO Wet Etch Properties in an In-Line Wet Etch,Cleaning System by using an Alternating Movement of Substrate
Sung Jae Hong, Sang Jik Kwon, Eou Sik Cho
J Electr Electron Mater 2008;21(8):715-718.   Published online August 1, 2008
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The Characteristic Variation of Mask with Plasma Treatment
Jwa Yeon Kim, Sang Su Choi, Byung Sun Kang, Dong Soo Min, Young Jin An
J Electr Electron Mater 2008;21(2):111-117.   Published online February 1, 2008
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A Study on 013㎛ Cu/Low-k Process Setup and Yield Improvement
J Electr Electron Mater 2007;20(4):325-331.   Published online April 1, 2007
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Investigation of PEG (polyethyleneglycol) Removal Mechanism during UV/O2 Gas Phase Cleaning for Silicon Technology
J Electr Electron Mater 2006;19(11):985-993.   Published online November 1, 2006
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Simulation of Ultrasonic Dry Cleaning for Semiconductor/display Device Application
J Electr Electron Mater 2004;17(12):1259-1263.   Published online December 1, 2004
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