In this paper, the changes in the electrical characteristics (arc energy, contact resistance, and bouncing phenomenon) due to the deterioration of the contact are analyzed. The results are generally consistent and can be analyzed for contact deterioration. The results of the experiment demonstrate that the arc energy is linearly related to the current when the contact samples and the voltage conditions are the same. The contact resistance varies due to multiple factors, but is generally within a certain range, and the contact deterioration can be determined. Contact stabilization can be detected by the decrease in the bouncing phenomenon due to deterioration (the change of the shape of the contact).

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

The power relay can be easily controlled with high voltage and current through the contacts. For this reason, has become widely used range in a variety of applications. In this study, we measured the contact resistance between the bouncing phenomenon of contact due to the change of load. The results of the experiment, the contact resistance increases with the deterioration of the contact, it is possible to predict the life of the relay contacts through the contact resistance. And relay bounce duration time have occurred in 3.5 ㎳ or less. In addition, it is possible to use the results to design an arc suppression circuit device.

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn`t have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.