In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

Because of the rapidly changing environment and high uncertainties, the semiconductor industry is in need of appropriate forecasting technology. In particular, both the cost and time in the test process are increasing because the process becomes complicated and there are more factors to consider. In this paper, we propose a prediction model that predicts a final “good” or “bad” on the basis of preconditioning test data generated in the semiconductor test process. The proposed prediction model solves the classification and regression problems that are often dealt with in the semiconductor process and constructs a reliable prediction model. We also implemented a prediction model through various machine learning algorithms. We compared the performance of the prediction models constructed through each algorithm. Actual data of the semiconductor test process was used for accurate prediction model construction and effective test verification.

Epitaxial ZnO nanowires (NWs) were synthesized on sapphire (001) substrates using a hydrothermal process. The effects of the pH value of the precursor solution on the structural and optical properties of the resulting NWs was studied. The epitaxial relationship and the domain matching configuration between the sapphire (001) substrate and the as-grown ZnO NWs were determined using synchrotron X-ray diffraction measurements. The (002) plane of wurtzite ZnO NW grows in the surface normal direction parallel to the sapphire (001) direction. However, three types of in-plane domain matching configurations were observed, such as the on-position, 30°-rotated position, and ±8.5°-rotated position relative to the on-position, which might be attributed to inheriting the in-plane domain configuration of the ZnO seed layer.

In this work, we conducted a study on cell strings of high efficiency and high power solar cell modules via simulation. In contrast to the conventional module manufacturing method, the simulation was performed by connecting cutting cells divided into four parts from 6-in size using the electrically conductive adhesive (ECA). The resistance of the ECA added in series connection was extracted using an experimental method. This resistance was found to be 3 mΩ. Based on this simulation, we verified the change in efficiency of the string as a function of the number of cutting cell connections. Consequently, the cutting cell efficiency of the first 20.08% was significantly increased to 20.63% until the fifth connection; however, for further connections, it was confirmed that the efficiency was saturated to 20.8%. Connecting cutting cells using ECA improves the efficiency of the string; therefore, it is expected that it will be possible to fabricate modules with high efficiency and high power.

It is extremely important to improve methodologies for the lifetime assessment of porcelain insulators. While there has been a considerable amount of work regarding the phenomena of lifetime distributions, most of the studies assume that aging distributions follow the Weibull distribution. However, the true underlying distribution is unknown, giving rise to unrealistic inferences, such as parameter estimations. In this article, we review several distributions that are commonly used in reliability and survival analysis, such as the exponential, Weibull, log-normal, and gamma distributions. Some properties, including the characteristics of failure rates of these distributions, are presented. We use a Bayesian approach for model selection and parameter estimation procedures. A well-known measure, called the Bayes factor, is used to find the most plausible model among several contending models. The posterior mean can be used as a parameter estimate for unknown parameters, once a model with the highest posterior probability is selected. Extensive simulation studies are performed to demonstrate our methodologies.

For comparison to the Li-ion battery, evaluating a thermal battery must consider additional variables. The first one is the temperature difference between the battery and its unit cell. Thermal batteries and their unit cells have a temperature difference that is caused by the thermal battery activation mechanism and its shape. The second variable is the electrochemical reaction steps. Most Li-ion batteries have a constant electrochemical reaction at the electrode, and battery voltage is affected when the concentration of Li ions is changed. However, a thermal battery has several steps in its electrochemical reaction, and each step has a different potential. In this study, we used unit cell discharge tests based on interpolating a 4D lookup table to estimate the performance of a thermal battery. From the test results, we derived an estimation algorithm by interpolating the table, which is queried from specified profile groups. As a result, we found less than a 5 percent difference between estimation and experiment at the 1.3 V cut-off time.

This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

In this paper, in order to avoid equipment malfunction due to electromagnetic waves, which can occur when high-voltage live line diagnostic device fabrication, the enclosure structure of the diagnostic device with power lines that can minimize the EMI (electromagnetic interference) was modeled using the FEM (finite element method). Simulation examined the strength of the electric field in the required thickness, material and regions where there is a control board while changing the curvature radius of the corner making the enclosure, and By applying a mechanical design and simulation results that occur during the actual production has been designed for the final design. Most of the simulation results for the electric field is concentrated in the final model, the inner edge of the enclosure could be confirmed that the stable structure.

In this research, it have developed a sensor that could diagnose inner deterioration of covered wires. With this sensor it observed results from simulation, and the attribute required for realization. For simulation it have used FLUX, it have considered all of geometric and electromagnetic information from coil and base metal that influences eddy current sensor`s property in order to predict the final result. It assumed there is no mutual inductance in the coil with N number of turns, because equivalent current flows in coil that is continuously connected in eddy current sensor. It assumed circular coil loop draws a circle, always have self inductance, and they are connected in series and overlapped according number of turns (N) in coil, and bobbin configuration. Actual sensor was produced with consideration of inductance and number of turns (N). In conclusion, it were able to test the dependency through results from simulation, actual measurement, and modeling of simulation. It is considered that attributes of respective base metal and structure can be predicted by simulating in advance.

With the recent advent of through silicon via (TSV) technology, wafer level-TSV interconnection become feasible in high volume manufacturing. To increase the manufacturing productivity, it is required to develop equipment for backside passivation layer deposition for TSV wafer bonding process with high deposition rate and low film stress. In this research, we investigated the relationship between process parameters and the induced wafer stress of PECVD silicon nitride film on 300mm wafers employing statistical and artificial intelligence modeling. We found that the film stress increases with increased RF power, but the pressure has inversely proportional to the stress. It is also observed that no significant stress change is observed when the gas flow rate is low.

In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.

Magnetoelectric(ME) bulk composites with PZT- PYN- PZN/FeO1 were prepared by using a conventional ceramic methods and investigated on the ME voltage vs frequency of ac magnetic fields. We made the electric equivalent circuits by using the Maxwell-Wagner model and simulated the frequency dependence of ME voltage in low frequency region. IVIE devices were described by a series of two equivalent circuits of piezoelectric and magnetic, which have the relaxation time T due to the interaction between ME device and load resistor. Equivalent circuit of piezoelectric material is independent of frequency. However ferrite magnetic materials have Debye absorption and dipolar dispersion, whose equivalent circuit is a function of frequency. Therefore we suggest the resistance in the equivalent circuit is proportion to (1 + w2t2) and the capacitance is in inverse proportion to (1 + w w2t2) in the magnetic materials.

Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TF1`) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT`s behavior models implemented in SPICE tools, it can be easily added to them.

In this paper the author proposes a method of implementing a numerical model for threshold voltage (V_th) shift in organic thin-film transistors (QTFTs) into SPICE tools. V_th shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the V_th shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent V_th shift in AIM-SPICE and the results show the proposed method is applicable to various types of V_th shifts.

Due to the high etch rate and low fabrication cost, the wet etching of silicon using KOH etchant is widely used in MEMS fabrication area. However, anisotropic etch characteristic obstruct intuitional mask design and compensation structures are required for mask design level. Therefore, the accurate modeling for various types of silicon surface is essential for fabrication of three-dimensional MEMS structure. In this paper, we modeled KOH etch profile for MEMS based energy harvester using fuzzy logic. Modeling results are compared with experimental results and it is applied to design of compensation structure for MEMS based energy harvester. Through Fuzzy inference approaches, developed model showed good agreement with the experimental results with limited etch rate information.

For integrated complementary metal oxide semiconductor (CMOS) circuits, the lateral spread for two-dimensional (2-D) impurity distributions are very important for the analyzing the devices. The measured two-dimensional SEM data obtained using the chemical etching-method matched very well with the results of the Gauss model for boron implanted samples. But the profiles in boron implanted silicon were deviated from the Gauss model. The profiles in boron implanted silicon were shown a little bit steep profile in the deep region due to backscattering effect on the near surface from the bombardments of light boron ions. From the simulated 3-D data obtained using an analytical model, the 1-D and 2-D data were compared with the experimental data and could be verified the justification from the experimental data. The data of 3-D model were also shown good agreements with the experimental and the simulated data. It can be used in the 3-D chip design and the analysis of microelectro-mecanical system (MEMS) and special devices.

A bushing is very important because it must supply the high voltage to the power equipment. Generally, the surface of bushing is contaminated with rain, dust, salt and others. A bushing with contaminations at air are serious problem in insulation. Therefore, it is important to understand the inspection and diagnoses of the safety. The ultra-violet rays(UV) camera has attracted interest from the view point of easy judgement. In this paper, we will report on the corona discharge characteristics on bushing model with contaminations. Also, UV images of discharge in air are analyzed using prototype UV camera of Korea. These results are studied at both AC and DC voltage under a non-uniform field.

The adsorption kinetic study of ruthenium complex, N3, onto nanoporous titanium dioxide (TiO2) photoanodes has been carried out by measuring dye uptake in-situ. Three simplified kinetic models including a pseudo first-order equation, pseudo second-order equation and intraparticle diffusion equation were chosen to follow the adsorption process. Kinetic parameters, rate constant, equilibrium adsorption capacities and related coefficient coefficients for each kinetic model were calculated and discussed. It was shown that the adsorption kinetics of N3 dye molecules onto porous TiO2 obeys pseudo second-order kinetics with chemisorption being the rate determining step. Additionally the heterogeneous surface and the pore size distribution of porous TiO2 adsorbents were also discussed.

In this study, a method to measure the thickness of thin film by EDS (energy dispersive spectroscopy) is suggested. We have developed a model which calculates the thickness of thin film from the characteristic x-ray intensity ratio of the elements in thin film and substrate by considering incident electron beam energy, x-ray generation curve, backscattering and absorption of x-ray, take-off angle of x-ray and tilt angle of the sample. We obtained the relation curve between the film thickness measured experimentally and the x-ray intensity ratio of elements. The film thicknesses calculated from the model agrees quite well with those measured experimentally. Therefore, the thin film thickness can be measured rapidly and accurately by using the model developed in this study and the x-ray intensity ratio obtained in EDS analysis.

ABLB (alternate binaural loudness balance) test is one of the medical assessments to diagnose detailed lesion of sensory-neural hearing loss based on a recruitment phenomenon. However, current ABLB audiometry takes an operational model, so called face-to-face model, in which model one audiometrist can assess only one subject at a time. As a result, this face-to-face model leads to expensive audiometrist`s labor cost and lengthy wait when there exist many subjects. As a solution, this paper suggests an ABLB audiometry system supporting one-to-many model in which model an audiometrist enables to assess several subjects concurrently. By providing such capabilities as real-time transfer of assessment result, video monitoring of subject and video chat, this solution can provide same effect as face-to-face model but overcome weakness of the existing face-to-face model.