In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

In this paper, in order to avoid equipment malfunction due to electromagnetic waves, which can occur when high-voltage live line diagnostic device fabrication, the enclosure structure of the diagnostic device with power lines that can minimize the EMI (electromagnetic interference) was modeled using the FEM (finite element method). Simulation examined the strength of the electric field in the required thickness, material and regions where there is a control board while changing the curvature radius of the corner making the enclosure, and By applying a mechanical design and simulation results that occur during the actual production has been designed for the final design. Most of the simulation results for the electric field is concentrated in the final model, the inner edge of the enclosure could be confirmed that the stable structure.

In this research, it have developed a sensor that could diagnose inner deterioration of covered wires. With this sensor it observed results from simulation, and the attribute required for realization. For simulation it have used FLUX, it have considered all of geometric and electromagnetic information from coil and base metal that influences eddy current sensor`s property in order to predict the final result. It assumed there is no mutual inductance in the coil with N number of turns, because equivalent current flows in coil that is continuously connected in eddy current sensor. It assumed circular coil loop draws a circle, always have self inductance, and they are connected in series and overlapped according number of turns (N) in coil, and bobbin configuration. Actual sensor was produced with consideration of inductance and number of turns (N). In conclusion, it were able to test the dependency through results from simulation, actual measurement, and modeling of simulation. It is considered that attributes of respective base metal and structure can be predicted by simulating in advance.

With the recent advent of through silicon via (TSV) technology, wafer level-TSV interconnection become feasible in high volume manufacturing. To increase the manufacturing productivity, it is required to develop equipment for backside passivation layer deposition for TSV wafer bonding process with high deposition rate and low film stress. In this research, we investigated the relationship between process parameters and the induced wafer stress of PECVD silicon nitride film on 300mm wafers employing statistical and artificial intelligence modeling. We found that the film stress increases with increased RF power, but the pressure has inversely proportional to the stress. It is also observed that no significant stress change is observed when the gas flow rate is low.

Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TF1`) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT`s behavior models implemented in SPICE tools, it can be easily added to them.

In this paper the author proposes a method of implementing a numerical model for threshold voltage (V_th) shift in organic thin-film transistors (QTFTs) into SPICE tools. V_th shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the V_th shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent V_th shift in AIM-SPICE and the results show the proposed method is applicable to various types of V_th shifts.

Due to the high etch rate and low fabrication cost, the wet etching of silicon using KOH etchant is widely used in MEMS fabrication area. However, anisotropic etch characteristic obstruct intuitional mask design and compensation structures are required for mask design level. Therefore, the accurate modeling for various types of silicon surface is essential for fabrication of three-dimensional MEMS structure. In this paper, we modeled KOH etch profile for MEMS based energy harvester using fuzzy logic. Modeling results are compared with experimental results and it is applied to design of compensation structure for MEMS based energy harvester. Through Fuzzy inference approaches, developed model showed good agreement with the experimental results with limited etch rate information.