(Ga203)x(ZnO)100-x, (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the Ga203 content. The GZO film with an atomic ratio of Ga203 of x 7 wt. %, shows the lowest resistivity of 7.5 X 10-4 cm. The GZO films were also prepared at various substrate temperatures from room temperature to 300t, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of 2.8x 10u1 n that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of 300t by using the FTS.
Tailoring microstructural and optoelectronic properties of ZnOx thin film via oxygen content in radio frequency reactive magnetron sputtering A. Chelouche, T. Touam, D. Mendil, D. Djouadi, F. Challali Journal of Materials Science: Materials in Electronics.2025;[Epub] CrossRef
Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature Jae Yong Jung, Shin Ho Cho Journal of Korean Institute of Electrical and Electronic Materials Engineers.2010; 23(4): 280. CrossRef
Fabrication and Characteristics of ZnO TFTs for Flexible Display using Low Temp Process Young Su Kim, Min Ho Kang, Dong Ho Nam, Kang Il Choi, Hi Deok Lee, Ga Won Lee Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(10): 821. CrossRef
Effects of Deposition Temperature on the Properties of InN Thin Films Grown by Radio-frequency Reactive Magnetron Sputtering Shin Ho Cho Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(10): 808. CrossRef
Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature Jae Yong Jung, Shin Ho Cho Journal of Korean Institute of Electrical and Electronic Materials Engineers.2010; 23(4): 280. CrossRef
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