Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×10¹¹ Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.

Metal halide perovskites (MHPs) have attracted attention as new display materials due to their excellent optical properties, but their application is limited by the complexity of conventional synthesis methods and the film formation processes. As an alternative, color conversion film fabricated via the aerosol deposition (AD) process using CsPbBr₃/Al₂O₃ powder, a ceramic matrix-based MHP composite, has expanded the practical utility of MHPs by simplifying both the synthesis and film formation steps. Nevertheless, the hammering effect that occurs during the AD process can damage the MHP crystal structure, leading to degradation of its optical properties. Therefore, in this study, to overcome the problem of optical degradation, we compared the structural and photoluminescence (PL) properties of films fabricated by adding polytetrafluoroethylene (PTFE), a material with a buffering effect, to the CsPbBr₃/Al₂O₃ starting powder at mass ratios of 0, 0.1, 0.5, 1, and 2 wt% to mitigate the hammering effect. The film containing 1 wt% PTFE exhibited the highest PL performance, achieving a luminous efficiency of 52.1 lm/W. This improvement is attributed to PTFE providing an optimal buffering effect without forming aggregates on the film surface. These results further enhance the applicability of AD-based color conversion films and are expected to contribute to the development of high-resolution display technologies.

This study explores the realization of high-efficiency white LED lighting by applying cyan-emitting quantum dot (CQD) and red-emitting quantum dot (R-QD) deposition without any host matrix onto a yellow-emitting phosphor-in-glass (YPIG) substrate using an aerosol-assisted deposition (AAD) process. The AAD process facilitates the direct formation of densely packed QD-deposited layers on the substrate, effectively addressing challenges such as optical efficiency loss and degradation typically associated with organic host matrices. C-QD and R-QD coatings, deposited with thicknesses of 0.84 μm and 0.77 μm on the upper and lower Y-PIG substrate, exhibited robust color conversion properties. These films achieved a luminous efficacy of 77 lm/W and a high color rendering index (CRI) of 96.8 under blue light excitation. The dual-layer structure produced highquality light closely resembling natural daylight, as confirmed through real image. Consequently, the research suggests the potential of AAD-based QD deposition to achieve superior performance without relying on host matrices, offering a viable solution for high-efficiency lighting applications. Further optimization of deposition parameters and exploration of diverse substrates and QD material combinations are expected to expand the applicability of this technique in future research.

Physically Unclonable Functions (PUFs) provide a high level of security for private keys using unique physical characteristics of hardware. However, fabricating PUF chips requires numerous semiconductor processes, leading to high costs, which limits their applications. In this work, we introduce a low-cost manufacturing method for PUF security chips. First, surface roughening through wet-etching is utilized to create random variables. Additionally, physical vapor deposition is added to further enhance randomness. After PUF chip fabrication, both Hamming distance (HD) and Hamming weight (HW) are extracted and compared to verify the fabricated chip. It is confirmed that the PUF chip using two different multiple process variables demonstrates superior uniqueness and uniformity compared to the PUF security chip fabricated using only a single process variable.

Dielectric ceramic capacitors present high output power density due to the fast energy charge and discharge nature of dielectric polarization. By forming dense ceramic films with nano-grains through the Aerosol Deposition (AD) process, dielectric ceramic capacitors can have high dielectric breakdown strength, high energy storage density, and leading to high power density. Dielectric capacitors fabricated by AD process are expected to meet the increasing demand in applications that require not only high energy density but also high power output in a short time. This article reviews the recent progress on the dielectric ceramic capacitors with improved energy storage properties through AD process, including energy storage capacitors based on both leadbased and lead-free dielectric ceramics.

High-density crossbar arrays based on storage class memory (SCM) are ideally suited to handle an exponential increase in data storage and processing as a central hardware unit in the era of AI-based technologies. To achieve this, selector devices are required to be co-integrated with SCM to address the sneak-path current issue that indispensably arises in such crossbar-type architecture. In this perspective, we first summarize the current state of tellurium-based threshold-switching devices and recent advances in the material, processing, and device aspects. We thoroughly review the physicochemical properties of elemental tellurium (Te) and representative binary tellurides, their tailored deposition techniques, and operating mechanisms when implemented in two-terminal threshold switching devices. Lastly, we discuss the promising research direction of Te-based selectors and possible issues that need to be considered in advance.

For decades, sputtering as a physical vapor deposition (PVD) method has been a widely used technique for film coating processes. The sputtering enables oxides, metals, alloys, nitrides, etc to be deposited on a wide variety of substrates from silicon wafers to polymer substrates. Meanwhile, transparent conductive oxides (TCOs) have played important roles as electrodes in electrical applications such as displays, sensors, solar cells, and thin-film transistors. TCO films fabricated through a sputtering process have a higher quality leading to an improved device performance than other films prepared with other methods. In this review, we discuss the mechanism of sputtering deposition and detail the TCO materials. Related technologies (processing conditions, materials, and applications) are introduced for electrical applications.

The ferroelectricity in Hf_0.5Zr_0.5O₂ (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400℃. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500℃) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400℃ or higher regardless of the annealing time. At the annealing temperature of 350℃, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

Capacitive-type humidity sensors with a high sensitivity and fast response/recovery times have attracted a great attention in non-contact respiration biological signal monitoring applications. However, complicated fabrication processes involving high-temperature heat treatment for the hygroscopic film is essential in the conventional ceramic-based humidity sensors. In this study, a non-toxic ceramic/metal halide (BaTiO₃(BT)/NaCl) humidity sensor was prepared at room temperature using a solvent-free aerosol deposition process (AD) without any additional process. Currently prepared BT/NaCl humidity sensor shows an excellent sensitivity (245 pF/RH%) and superior response/recovery times (3s/4s) due to the NaCl ionization effect resulting in an immense interfacial polarization. Furthermore, the non-contact respiration signal variation using the BT/NaCl sensor was determined to be over 700% by maintaining the distance of 20 cm between the individual and the sensor. Through the AD-fabricated sensor in this study, we expect to develop a non-contact biological signal monitoring system that can be applied to various fields such as respiratory disease detection and management, infant respiratory signal observation, and touchless skin moisture sensing button.

The quench voltage of the second-generation superconducting wire is affected by the resistivity characteristics of the stabilization layer. The specific resistance of the stabilization layer can be changed by the deposition process using RF magnetron sputtering. In this paper, a thin film made of a homogeneous material (Ag) and a dissimilar material (Cu) was deposited on the stabilization layer of the second-generation superconducting wire through RF magnetron sputtering. We found that the specific resistance was reduced by increasing the thickness of the stabilization layer. The reduction in the resistivity of the stabilization layer led to a decrease in the quench voltage of the second-generation superconducting wire. We suggest that various characteristic changes of the second-generation superconducting wire can be expected through the successful change in the resistivity of the stabilization layer of the proposed deposition process.

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

Controlling ambient humid condition through high performance humidity sensors has become important for various fields, including industrial process, food storage, and the preservation of historic remains. Although aerosol deposited humidity sensors using ceramic BaTiO₃ (BT) material have been widely studied because of their longtime stability, there remain critical disadvantages, such as low sensitivity, low linearity, and slow response/recovery time in case of the sensors fabricated at room temperature. To achieve superior humidity sensing properties even at room temperature condition, BT-Cu composite films utilizing aerosol deposition (AD) process have been proposed based on the percolation theory. The BT-Cu composite films showed gradually improved sensing properties until the Cu concentration reached 15 wt% in the composite film. However, the excessive Cu (above 30 wt%) containing BT-Cu composite films showed a rapid decrease of the sensing properties. The results of observed surface morphology of the AD fabricated composite films, to figure out the metal filler effect, showed correlation between surface topography as well as size and the amount of open pores according to the metal filler content. Overall, it is very important not only dielectric constant of the humidity sensing films but also microstructures, because they affect either the variation range of capacitance by ambient humidity or adsorption/desorption of ambient humidity onto/from the humidity sensing films.

Single-layer graphene is grown directly on Ti-buffered SiO₂ at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

Methylammonium lead iodide (MAPbI₃) thin films were grown at low temperatures on glass substrates via 3-zone chemical vapor deposition. Lead iodide (PbI₂) and lead bis (dipivaloylmethanate) [Pb(dpm)₂] precursors were used as lead sources. Due to the high sublimation temperature (~400℃) of the PbI₂ precursor, a low substrate temperature could not be constantly maintained. Therefore, MAPbI₃ thin films degraded into the PbI₂ phase. In contrast, for the Pb(dpm)₂ precursor, a substrate temperature of ~120℃ was maintained because the sublimation temperature of Pb(dpm)₂ is as low as 130℃ at a high vapor pressure. As a result, high-quality MAPbI3 thin films were successfully grown on glass substrates using Pb(dpm)₂. The rms (root-mean-square) roughness of MAPbI3 thin films formed from Pb(dpm)₂ was as low as ~19.2 nm, while it was ~22.7 nm for those formed using PbI₂. The grain size of the films formed from Pb(dpm)₂ was as large as approximately 350 nm.

Four types of BaTiO₃ powders are prepared and successfully deposited on glass and Pt/Si substrates using the aerosol deposition process. Particles with sizes of 0.45 μm and 0.3 μm are selected as the starting powder, while those powders are treated using a different milling method. The jet-milled and ball-milled powders not only showed a smaller particle-size distribution, but compared with the non-milled powder, it also had a higher deposition rate using the uniformly generated aerosol. Although the films deposited using particles with size 0.45 μm exhibited some craters on the surface, significantly flat film surfaces were obtained. However, particles with size 0.3 μm create a slightly rough film surface, but the dielectric constant was greater than in the case involving particles with size 0.45 μm. Consequently, a suitably large particle size significantly influences the deposition rate and improvement in the surface roughness, and a uniform particle size distribution appears to contribute to an improved dielectric constant. Therefore, it is believed that the dielectric properties along with the growth characteristics can be enhanced by limiting particle size and shape.

Al₂O₃ powders with particle sizes of 0.35 μm, 0.5 μm, 1.5 μm, and 2.5 μm are deposited onto glass and Cu substrates using the aerosol deposition (AD) process. The deposition characteristics of Al₂O₃ films using those four types of Al₂O₃ powders are investigated to determine the influence of the particle size on the films. To observe detailed micro-structures of the films, the cross-section and surface morphology are observed. Then, the crystalline size and internal strain are calculated from X-ray diffraction peaks in order to confirm the hammering effect as well as the micro-strain during the AD deposition. From the above results, deposition mechanisms related to the particle size are studied. The results of this study indicate the optimal particle size and formation mechanisms for dense Al₂O₃ film with a smooth surface roughness as well as for a porous Al₂O₃ film with a rough surface roughness.

Pure BiFeO₃ (BFO) and (Eu, V) co-doped Bi_0.9Eu_0.1Fe_0.975V_0.025O_3+δ (BEFVO) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization (2P_r) of the BEFVO thin film was approximately 26 μC/cm² at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film (4.81×10^-5 A/cm² at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.

Black phosphorus (BP) is a potential candidate for an anode in lithium ion batteries due to its high theoretical capacity and the large interlayer spacing in the monolayered phosphorene form, allowing for lithium intercalation/ deintercalation. In this study, large-scale exfoliation of bulk BP was accomplished using a solution of NaOH and N-methyl-2-pyrrolidone (NMP), yielding phosphorene, which can be assembled into nanoflakes using electrophoretic deposition (EPD). Through the systematic addition of NaOH and subsequent sonication, BP nanoflakes were obtained in high yields by EPD, allowing for the integration of these nanoflakes into an anode in the film state. Anodes with a charge/discharge capacity of 172 mAh/g at a rate of 200 mA/g were obtained, which are promising for battery applications through various post-film treatments.

Lithium-ion batteries used for IT, automobiles, and industrial energy-storage devices have battery management systems (BMS) to protect the battery from abnormal voltage, current, and temperature environments, as well as safety devices like, current interruption device (CID), fuse, and vent to obtain positive temperature coefficient (PTC). Nonetheless, there are harmful to human health and property and damage the brand image of the manufacturer because of smoke, fire, and explosion of lithium battery packs. In this paper, we propose a systematic protection algorithm combining battery temperature, over-current, and interconnection between protection elements to prevent copper deposition, internal short circuit, and separator shrinkage due to frequent and instantaneous over-current discharges. The parameters of the proposed algorithm are suggested to utilize the experimental data in consideration of battery pack operating conditions and malicious conditions.

Transition metal oxide materials have attracted widespread attention as Li-ion battery electrode materials owing to their high theoretical capacity and good Li storage capability, in addition to various nanostructured materials. Here, we fabricated a CoO Li-ion battery in which Co nanoparticles (NPs) are deposited into a current collector through electrophoretic deposition (EPD) without binding and conductive agents, enabling us to focus on the intrinsic electrochemical properties of CoO during the conversion reaction. Through optimized Co NP synthesis and electrophoretic deposition (EPD), CoO Li-ion battery with 630 mAh/g was fabricated with high cycle stability, which can potentially be used as a test platform for a fundamental understanding of conversion reaction.

Pure BiFeO₃ (BFO) and codoped Bi_0.9A_0.1Fe_0.975Zn_0.025O_3-δ (A=Eu, Dy) thin films were prepared on Pt(111)/ Ti/SiO₂/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the Bi_0.9Eu_0.1Fe_0.975Zn_0.025O_3-δ (BEFZO) and Bi_0.9Dy_0.1Fe_0.975Zn_0.025O_3-δ (BDFZO) thin films were about 36 and 26 μC/cm² at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and 1.21×10^-6 A/cm², respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

Using a vanadium dioxide (VO₂) source, highly pure and amorphous vanadium oxide (VO) thin films were deposited using an e-beam evaporator at room temperature and high vacuum (<10^-7 Torr). Then, by controlling the post-annealing conditions such as N₂：O₂ pressure ratio and annealing time, we could easily synthesize a homogeneous VO₂ thin film and also mixed-phase VO thin films, including VO₂, V₂O₅, V₃O₇, V₅O₉, and V₆O₁₃. The crystallinity and phase of these were characterized by X-ray diffraction, and the surface morphology by FE-SEM. Moreover, the electrical properties and ethanol sensing measurements of the VO thin films were analyzed as a function of temperature. In general, mixed-phases as a self-doping effect have enhanced electrical properties, with a high carrier density and an enhanced response to ethanol. In summary, we developed an easy, scalable, and reproducible fabrication process for VO thin films that is a promising candidate for many potential electrical and optical applications.

Effective surface area and morphology of a sensitive thin film are important factors for its applications in sensor systems for the analysis of physical properties. In this study, we investigated the morphologies, electrochemical properties, and applicability of zinc oxide multilayer thin films fabricated by electrodeposition and annealing. The microstructure and electrochemical properties of the zinc oxide films were dependent on temperature and applied voltage. The best characteristics were obtained at an applied voltage of -1.4 V and a temperature of 50℃. The morphologies also changed upon annealing. The results suggest that the zinc oxide films fabricated by electrodeposition and annealing can be applied as various sensor materials.

We have evaluated the ferroelectric and electrical properties of pure BiFeO₃ (BFO) and Bi_0.9A_0.1Fe_0.975V_0.025O_3+α(A=Nd, Tb) thin films on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. The remnant polarization (2P_r) of the Bi_0.9Tb_0.1Fe_0.975V_0.025O_3+α (BTFVO) thin film was approximately 65 μC/㎠, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the Bi_0.9Nd_0.1Fe_0.975V_0.025O_3+α (BNFVO) thin film was approximately 37 μC/㎠ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at 2.75×10^-7 A/㎠ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

Pb(Zr_0.52Ti_0.48)O₃ (PZT) films with a thickness of 5~10 μm at the morphotropic phase boundary were fabricated by aerosol-deposition (AD), and their phase evolution and electrical properties were investigated. The microstructure of the AD PZT films revealed nanosized grains with a low crystallinity and a dense structure at room temperature. The AD PZT films showed a mixture of tetragonal and rhombohedral phases. The post-annealing temperature was varied to study the phase transition behavior. The crystallinity of the AD PZT films was enhanced by annealing at 450, 550, and 650℃ for 2 h. At 650℃, the tetragonal and rhombohedral phases reacted to form a bridge phase between the two phases. The polarization-electric field hysteresis loops of the AD PZT film annealed at 650℃ exhibited a smaller cohesive field and a lower slim hysteresis than the films annealed at 450 and 550℃.

We report on thin-film transistors based on TiO_x pre-annealed by femtosecond laser pulses. A 30-nm thick TiO_x active channel layer was initially deposited by an ALD system. The TiO_x semiconducting films were annealed by irradiation with a femtosecond laser (power: 3 W/cm²) for 5, 25, and 50s. Atomic force microscopy images revealed that the surface of a TiO_x film without femtosecond laser pre-annealing was relatively rough, while after annealing with femtosecond laser pulses, the surface of the TiO_x films became smooth. With increasing radiation time, the surrounding gas atmosphere could have a larger impact on the TiO_x surface; meanwhile, the thin-film roughness decreased. Thin-film transistors with TiO_x active channels pre-annealed at 50s exhibited good transfer characteristics and an on-to-off current ratio of ~10³.

IZO transistors with Al₂O₃ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew Al₂O₃ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [In(NO₃)₃·xH₂O] and 0.1 M zinc acetate dehydrate [Zn(CH₃COO)₂·2H₂O] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of 0.90 ㎠/Vs in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k Al₂O₃ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

The effect of particle sizes on the aerosol deposition (AD) of Cu films is investigated in order to understand the deposition behaviors of metal powder during the AD process. The Cu coatings fabricated by using 2 μm Cu powders had a dense microstructure, a high deposition rate (1.6 ± 0.2 μm/min), and low resistance (9.42 ± 0.4 μΩ·cm) compared to that from using Cu powder with a particle size greater than 5 μm. Also, from estimating the internal micro-strain of Cu films, the Cu coatings fabricated by using 2 μm Cu particles exhibited a high micro-strain value of 3.307×10^-3. On the other hand, the strain of Cu coatings fabricated with 5 μm particles was decreased to 2.76×10^-3. These results seem to show that the impacted Cu particles are compressed and flattened by shock waves, and that their bonding is associated with the high internal micro-strain caused by plastic deformation.

Ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) films were deposited on SrTiO₃(100) substrate by using conductive SrRuO₃ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic SrRuO₃ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization (P_r) of 29.0 μC/cm² and coercive field (E_c) of 83 kV/cm, and P_r decreased and E_c increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.