초록

InP/ZnSe/ZnS multi-shell 양자점 발광층을 이용하여 양자점 양자점 발광다이오드(QD-LED)를 개발하였다. 유기 정공수송층/QD/유기 전자수송층 구조를 이용하여 QD-LED를 제작하였다.Poly(4-butylphenyl-diphenyl-amine)(poly-TPD)와 tris [2,4,6-trimethyl-3-(pyridin-3-yl) phenyl]borane (3TPYMB)를 각각 정공수송층과 전자수송층으로 사용하였으며, 3TPYMB 층의 두께를 50, 65로 하여 제작된 QD-LED의 발광 특성, 전류 효율 특성, 구동 특성을 조사하였다. 50 nm의 3TPYMB 층을 사용하여 제작된 QD-LED는 최대 1.3 cd/A의 전류 효율을 나타내었다.

Abstract

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• Keywords: Quantum dot, QD-LED, InP/ZnSe/ZnS, Poly-TPD, 3TPYMB