We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/TiO2/ indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the TiO2 layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at 400℃ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately 3.6×103 at 2.5 V.
