Hazardous gas leakage incidents rank among the most serious safety accidents, leading to significant loss of life, extensive property damage, and severe environmental pollution. This paper describes an innovative IoT-based Assembly Double Pipe System (IADPS) designed for the prevention, early detection, and automated isolation of toxic gas leaks. The proposed system features a double-layered pipe design, with nitrogen charged between the inner and outer pipes, and gas detectors installed at strategic locations. This configuration is intended to prevent pipe corrosion, suppress ignition caused by escaping gas, and facilitate the early detection of gas leaks, thereby mitigating the risk of safety accidents. Furthermore, the system includes a comprehensive real-time monitoring system for pipe integrity and gas leakage, as well as an automated gas leakage detection and isolation system to quickly respond to any incidents.

In this paper, we investigated the surface properties of polymer insulators to improve electrical insulation performance. First, after washing the polymer insulator in various ways, its contact angle was increased, thereby improving the hydrophobic properties and electrical insulation properties. In addition, TiO₂ thin films, which have been used as a photocatalytic material and have been applied to the polymer insulator surface of to enhance the surface and electrical insulating properties. For the sputtering method, the contact angle after coating the TiO₂ thin film increased with increasing RF power, but it was lower compared to that before coating, indicating that the hydrophobic properties of the surface were slightly deteriorated. Consequently, the electrical properties of the polymer-insulating material were maintained or improved after the TiO₂ thin-film coating.

When the clamp meter approaches the electric path where current is flowing, leakage current can be measured at a distance from the electric current because the induced current increases as the magnitude of the current increases and approaches nearer to the electric path. Therefore, measurements were carried out from a distance to avoid this effect. In addition, the measured values differ depending on the location of the power line that penetrates the ZCT of the clamp meter, thus measurements were performed at a location where this effect was minimized. The fraction of compliant branch circuits, whose leakage current was lower than 1.00 mA, was found to be 69.0% out of the total of 439 branch circuits, while the percentage of compliant branch circuits having an insulation resistance higher than 0.20 MΩ was found to be 93.2%. The reason why the percentage of compliant branch circuits with low leakage current was low might be due to the inclusion of capacitive leakage current in the total measured leakage current.

As a ZnO varistor is subjected to electrical and environmental stresses, it degrades gradually, which may result in power interruption by short circuit. This study investigates changes in the electrical characteristics of ZnO varistors due to deterioration owing to energy absorption, and determines the optimal parameters for on-line diagnosis of the varistor. Two types of varistors were used for an accelerated aging experiment involving the application of the 8/20 μs standard lightning impulse current. The electrical characteristics in terms of the reference voltage, total leakage current, resistive leakage current, and third-harmonic component of the total leakage current were measured, and their change rates were analyzed. The results revealed that the total leakage current increased slightly with an increase in the varistor absorbed energy, while the resistive leakage current and the third-harmonic component increased apparently. Therefore, the third-harmonic component of the total leakage current was proposed as the optimal parameter for on-line monitoring of ZnO varistor conditions.

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between 109 Å, 190 Å, 387 Å, and 818 Å which have the gate area 10-³ cm2. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

This paper dealt with the deterioration characteristics and an on-line diagnosis equipment for SPDs (surge protective devices). An accelerated aging test was carried out using a 8/20 μs standard lightning impulse current to analyze the changes of electrical characteristics and to propose the diagnostic parameters and the criterion for deterioration of ZnO varistor which is the core component of SPDs. Based on the experimental results, an on-line diagnosis equipment for SPD was fabricated, which can measure the total leakage current, reference and clamping voltage. The leakage current measurement circuit was designed using a low-noise amplifier and a clamp type ZCT. A linear controller, the leakage current measurement part and a HVDC were used in the measurement of reference voltage. The measurement circuit of clamping voltage consisted of a surge generator and a coupling circuit. In a calibration process, measurement error of the prototype equipment was less than 3%.

Titanium oxide (TiO2) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of TiO2 films synthesized at various ALD cycle numbers were investigated. The synthesized TiO2 films exhibited higher contact angle and smooth surface. The contact angle of TiO2 films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on TiO2 film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of TiO2 films for self-cleaning critically depended on a number of ALD-cycle.

The Sr based ceramic thin films were deposited on Si substrate by RF magnetron sputtering method. And Sr based thin films were annealed at 500～700℃ using RTA. The surface roughness showed about 2.4 nm in annealed thin film at 600℃. The capacitance density of Sr based thin films were increased with the increase of annealing temperature. The maximum capacitance density of 0.6 ㎌/㎠ was obtained by annealing temperature at 700℃. The voltage dependence of dielectric loss showed about 0.02 in voltage ranges of -10～＋10 V. The leakage current density of annealing temperature of 600℃ was the 4.0×10-6 A/㎠ at applied voltage of -5～＋5 V.

In this study, the leakage current - voltage characteristic and leakage current - time characteristic for the undegradated Ethylene Propylene Rubber and the Ethylene Propylene Rubber which is degradated by water tree for 200 hours have been measured on the temperature range of 50∼80℃ and applied DC voltage range of 200 V∼800 V for 90 minutes. The results of this study are listed below. In case the temperature is 50℃, it founds that the leakage current have shown a increase in proportion to the applied voltage as 2 pA in 200 V, 6 pA in 400 V, 10 pA in 600 V and 15 pA in 800 V. It founds that the leakage current increased with the rise of temperature. It founds that the leakage current was consistent as time goes by, the leakage current of the sample degradated by water tree for 200 hours has increased more than undegradated sample.

Niobium oxide(Nb2O5) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of 1.5 μs. From the thickness of the sputtered NbOx films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the NbOx films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the NbOx films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

Insulation breakdown of water-cooled generator stator windings occurs frequently due to leakage of cooling water and absorption into the insulation material. Leakage and absorption problems of water-cooled stator windings are often found during regular preventive maintenance. To evaluate cooling water leakage and absorption, diagnostic tests were performed on two water-cooled turbine generators, which have been in service for 13 and 17 years, respectively. The test results of the measured electrical properties such as dissipation factor (tano), capacitance and AC leakage current for water-cooled generator stator windings with wet bars are reported in this paper.

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

To integrate the sensor driver and logic circuits, fabricating down scaled transistors has been main issue. At this research, short channel effects were analyzed after n channel polycrystalline silicon thin film transistor was fabricated at high temperature. As a result, on current, on/off current ratio and transconductance were increased but threshold voltage, electron mobility and s-slope were reduced with a decrease of channel length. When carriers that develop at grain boundary in activated polycrystalline silicon have no gate biased, on current was increased with punch through by drain current. Also, due to BJT effect (parallel bipolar effect) that developed under region of channel by increase of gate voltage on current was rapidly increased.

To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increse of mask layer also increased the cost. On this research Bird`s Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.